Room temperature electroluminescence from Ge/Si quantum dots superlattice close to 1.6 μm

Physica Status Solidi (A) Applied Research

Volumn 198, Issue 1, 2003, Pages

  Talalaev, V G ^a,b   Cirlin, G E ^a,c,d   Tonkikh, A A ^a,c,d   Zakharov, N D ^a   Werner, P ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b ST PETERSBURG STATE UNIVERSITY   (Russian Federation)

^c IOFFE INSTITUTE   (Russian Federation)

^d INSTITUTE FOR ANALYTICAL INSTRUMENTATION   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTAL STRUCTURE; ELECTROLUMINESCENCE; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; OPTIMIZATION; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES; SUPERLATTICES; TEMPERATURE;

GERMANIUM SILICON QUANTUM DOTS SUPERLATTICE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0041508237     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200309006     Document Type: Article

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