Optical properties of InAs quantum dots in a Si matrix

Applied Physics Letters

Volumn 74, Issue 12, 1999, Pages 1701-1703

  Heitz, R ^a   Ledentsov, N N ^a   Bimberg, D ^a   Egorov, A Yu ^b   Maximov, M V ^b   Ustinov, V M ^b   Zhukov, A E ^b   Alferov, Zh I ^b   Cirlin, G E ^c   Soshnikov, I P ^d   Zakharov, N D ^d   Werner, P ^d   Gosele U ^d  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

^c INSTITUTE FOR ANALYTICAL INSTRUMENTATION   (Russian Federation)

^d MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ELECTRONIC STRUCTURE; LIGHT EMITTING DIODES; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

THREE-DIMENSIONAL CONFINEMENT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032615296     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123660     Document Type: Article

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