Fabrication and electrical characterization of top gate single-wall carbon nanotube field-effect transistors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 6, 2002, Pages 2798-2801

  Wind, S J ^a   Appenzeller, J ^a   Martel, R ^a   Derycke, V ^a   Avouris, P ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC FILMS; ELECTRIC POTENTIAL; ELECTRIC PROPERTIES; ELECTRODES; MOSFET DEVICES; TRANSCONDUCTANCE;

CONDUCTION CHANNEL; GATE TO CHANNEL SEPARATION; SINGLE WALL CARBON NANOTUBE;

CARBON NANOTUBES;

EID: 0036883169     PISSN: 0734211X     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1521731     Document Type: Article

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