Ni2 Si nanowires of extraordinarily low resistivity

Applied Physics Letters

Volumn 88, Issue 21, 2006, Pages

  Zhang, Z ^a   Lu, J ^b   Hellstrom P E ^a   Ostling M ^a   Zhang, S L ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b UPPSALA UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; GRAIN GROWTH; LITHOGRAPHY; NICKEL COMPOUNDS; POLYCRYSTALLINE MATERIALS; SILICON COMPOUNDS;

DENSITY OF DEFECTS; RECTANGULAR CROSS SECTION; SIDEWALL TRANSFER LITHOGRAPHY; SILICIDATION;

NANOSTRUCTURED MATERIALS;

EID: 33744518182     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2207222     Document Type: Article

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