Modeling hysteresis phenomena in nanotube field-effect transistors

IEEE Transactions on Nanotechnology

Volumn 4, Issue 2, 2005, Pages 284-288

  Robert Peillard, Arnaud ^a   Rotkin, Slava V ^b  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b LEHIGH UNIVERSITY   (United States)

Author keywords

Electrostatics of one dimensional (1 D) systems; Field effect transistors (FETs); Hysteresis; Nanotechnology; Nanotube (NT) nonvolatile memory; NT transistors; Tunneling

Indexed keywords

CARBON NANOTUBES; ELECTRIC POTENTIAL; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; ELECTROSTATICS; FIELD EFFECT TRANSISTORS; HYSTERESIS;

ELECTROSTATICS OF ONE DIMENSIONAL (1-D) SYSTEMS; NANOTUBE (NT) NONVOLATILE MEMORY; SWEEPING RATE; TRAPPING ELECTRONS;

NANOTECHNOLOGY;

EID: 15844399392     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2004.842053     Document Type: Article

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