Narrowing the field of high-k gate dielectrics: Intrinsic electronically-active bonding defects in nanocrystalline transition metal oxides

2006 International Workshop on Nano CMOS - Proceedings, IWNC

Volumn , Issue , 2006, Pages 148-159

  Lucovsky, Gerald ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

Asymmetric trapping; Grain boundary defects; Nanocrystalline transition metal dielectrics; O vacancy and interstitial defects; Pre existing and stress induced defects; Ultra thin dielectrics Ti; Zr Hf Si oxynitride alloys

Indexed keywords

EPITAXIAL GROWTH; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; METALS; MOS CAPACITORS; NANOCRYSTALLINE ALLOYS; NANOCRYSTALLINE MATERIALS; NANOSTRUCTURED MATERIALS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SPECTROSCOPIC ANALYSIS; TRANSITION METAL COMPOUNDS; TRANSITION METALS;

AB INITIO THEORIES; ASYMMETRIC TRAPPING; BONDING DEFECTS; ELECTRON AND HOLE TRAPS; GATE STACKS; GRAIN BOUNDARY DEFECTS; HIGH-K GATE DIELECTRICS; INTERFACIAL TRANSITION REGIONS; NANO-CMOS; NANO-CRYSTALLINE; NANOCRYSTALLINE TRANSITION METAL DIELECTRICS; O-VACANCY AND INTERSTITIAL DEFECTS; PRE-EXISTING AND STRESS-INDUCED DEFECTS; SI SUBSTRATE; SPECTROSCOPIC STUDIES; TRANSITION METAL-OXIDES; ULTRA-THIN DIELECTRICS TI; ZR/HF SI OXYNITRIDE ALLOYS;

GATE DIELECTRICS;

EID: 52149123893     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWNC.2006.4570987     Document Type: Conference Paper

References (28)

1. J-L. Autron, D. Munteanu and M. Houssa in High-Gate Dielectrics, ed. by M. Houssa (Inst. of Physics, Bristol, 2004) Chap. 3.4.
2. G. Lucovsky et. al,. IEEE Trans. Dev. Mat. Reliability 5 (2005), pp. 65-84.
3. G. Lucovsky and J. Lüning, Proceedings of ESSDERC 2005 Grenoble France (2005), pp. 439-444.
4. G. Lucovsky et al., Microelectronic Engineering (2006) in press.
5. P.D. Kirsch et al., Proceedings of ESSDERC 2005 Grenoble France (2005), pp. 367-370.
6. Houssa et al., Semicond. Sci. Technol. 16 (2001) 31.
7. X Zu, M. Houssa, S. DeGendt and M. Hyens, Appl. Phys. Lett.80 (2001) pp. 1975-1978.
8. K. Xiong, J. Robertson and S.J. Clark, Appl. Phys. Lett. 87 (2005) 1, and Refs. therein.
9. A.S. Foster et al., Phys. Rev. B 64 (2001) 224108; Phys. Rev. B 65 (2002) 174117.
10. F.A. Cotton, Chemical Applications of Group Theory, 2nd Ed. (Wiley Interscience, New York, 1963).
11. C.J, Ballhausen and H.B. Gray, Molecular Orbital Theory (Benjamin, New York, 1964);
12. Gray H.B., Electrons and Chemical Bonding (Benjamin, New York, 1965).
13. P.A. Cox, Transition Metal Oxides (Clarendon, Oxford, 1992).
14. I.B. Bersuker, Electronic structure and properties of transition metal compounds: introduction to the theory (Wiley, New York, 1996);
15. The Jahn-Teller effect (Cambridge University Press, Cambridge, 2006).
16. G. Lucovsky et al., J. Vac. Sci. Technol. B20 (2002) 1739.
17. J.L. Gavartin et al., arXiv.cond-mat 1 (2006) 0605593.
18. T-J. H. Takeuchi, H. Daewon and King, J. Vac. Sci. Technol. A22 (2004) 1337.
19. Y.M. Strzhemechny et al., J. Vac. Sci. Technol. B (2006) in press.
20. J.A. Felix et al., IEEE Trans. Nucl. Sci. 49 (2002) 3191.
21. J.A. Felix et al., Microelectronics Reliability 44 (2004) 563.
22. G. Lucovsky et al., IEEE Trans. Nucl. Sci. (2006) in press.
23. G. Lucovsky and J. Lüning, AIP Conf. Proceedings. (2006) in press.
24. B. Ju, Properties of Zr-Si Oxynitride Dielectric Alloys, PhD. Thesis, NC State University, Raleigh USA 2000.
25. G.B. Rayner, D. Kang and G. Lucovsky, J. Vac. Sci. Technol. B 21 (2003) 1783.
26. J.P. Maria, D. Wichakana, P. Parrete and A.I. Kingon, J. Mater. Res. 17 (2002) 1571.
27. M.J. Williams, S.M. Cho, S.S. He and G. Lucovsky, J. Non-Cryst. Solids 164-166 (1993) 67.
28. R.A. Wheeler, J. Am. Chem. Soc. 108 (1986) 2222.