-
4
-
-
0001906523
-
Longitudinal injection-plasma laser of InSb
-
Melngailis I. Longitudinal injection-plasma laser of InSb. Appl. Phys. Lett. 1965; 6: 59-61
-
(1965)
Appl. Phys. Lett.
, vol.6
, pp. 59-61
-
-
Melngailis, I.1
-
7
-
-
0026106377
-
Deep-red continuous wave top-surface-emitting vertical-cavity AlGaAs superlattice lasers
-
Lee YH, Tell B, Brown-Goebeler KF, Leibenguth RE, Mattera VD. Deep-red continuous wave top-surface-emitting vertical-cavity AlGaAs superlattice lasers. IEEE Photon. Technol. Lett. 1991; 3: 108-109
-
(1991)
IEEE Photon. Technol. Lett.
, vol.3
, pp. 108-109
-
-
Lee, Y.H.1
Tell, B.2
Brown-Goebeler, K.F.3
Leibenguth, R.E.4
Mattera, V.D.5
-
8
-
-
0027599474
-
Near room temperature continuous-wave lasing characteristic of GaInAsP/InP surface emitting laser
-
Baba T, Yogo Y, Koyama F, Iga K. Near room temperature continuous-wave lasing characteristic of GaInAsP/InP surface emitting laser. Electron. Lett. 1993; 29: 913-914
-
(1993)
Electron. Lett.
, vol.29
, pp. 913-914
-
-
Baba, T.1
Yogo, Y.2
Koyama, F.3
Iga, K.4
-
9
-
-
0037380486
-
InP-based VCSEL technology covering the wavelength range from 1.3 to 2.0 μm
-
Boehm G, Ortsiefer M, Shau R, et al. InP-based VCSEL technology covering the wavelength range from 1.3 to 2.0 μm. J. Crystal Growth 2003; 251: 748-753
-
(2003)
J. Crystal Growth
, vol.251
, pp. 748-753
-
-
Boehm, G.1
Ortsiefer, M.2
Shau, R.3
-
10
-
-
18744423255
-
6μm vertical cavity surface emitting laser based on IV-VI semiconductor compounds
-
Schwarzl T, Heiss W, Springholz G, Aigle M., Pascher H. 6μm vertical cavity surface emitting laser based on IV-VI semiconductor compounds. Electron. Lett. 2000; 36: 322-324
-
(2000)
Electron. Lett.
, vol.36
, pp. 322-324
-
-
Schwarzl, T.1
Heiss, W.2
Springholz, G.3
Aigle, M.4
Pascher, H.5
-
11
-
-
3943109587
-
Vertical-cavity surface emitting lasers in the 8-μm midinfrared spectral range with continuous-wave and pulsed emission
-
Fürst J, Schwarzl T, Böberl M, Pascher H, Springholtz G, Heiss W. Vertical-cavity surface emitting lasers in the 8-μm midinfrared spectral range with continuous-wave and pulsed emission. IEEE J. Quantum Electron. 2004; 40: 966-969
-
(2004)
IEEE J. Quantum Electron.
, vol.40
, pp. 966-969
-
-
Fürst, J.1
Schwarzl, T.2
Böberl, M.3
Pascher, H.4
Springholtz, G.5
Heiss, W.6
-
13
-
-
0034812993
-
Oxygen measurements at high pressures with verticl caviy surface-emitting lasers
-
Wang J, Sanders ST, Jefries JB, et al. Oxygen measurements at high pressures with verticl caviy surface-emitting lasers. Appl. Phys. B. 2001; 72: 865-872
-
(2001)
Appl. Phys. B.
, vol.72
, pp. 865-872
-
-
Wang, J.1
Sanders, S.T.2
Jefries, J.B.3
-
14
-
-
79956045555
-
High power and high brightness from an optically pumped InAs/InGaSb Type-II midinfrared laser with low confinement
-
Kaspi R, Ongstad A, Dente GC, et al. High power and high brightness from an optically pumped InAs/InGaSb Type-II midinfrared laser with low confinement. Appl. Phys. Lett. 2002; 81: 406-408
-
(2002)
Appl. Phys. Lett.
, vol.81
, pp. 406-408
-
-
Kaspi, R.1
Ongstad, A.2
Dente, G.C.3
-
16
-
-
0036466889
-
Mid-infrared laser-optical sensors for gas analysis
-
Werle P, Slemr F, Maurer K, Kormann R, Mucke R, Janker B. Mid-infrared laser-optical sensors for gas analysis. Optics and lasers in engineering 2002; 37: 101-114
-
(2002)
Optics and Lasers in Engineering
, vol.37
, pp. 101-114
-
-
Werle, P.1
Slemr, F.2
Maurer, K.3
Kormann, R.4
Mucke, R.5
Janker, B.6
-
17
-
-
0037803488
-
Different influence of long and short mid-infrared laser pulses on eye tissue
-
Jelinkova H, Pasta J, Nemec M, et al. Different influence of long and short mid-infrared laser pulses on eye tissue. Laser Physics 2003; 13: 735-742
-
(2003)
Laser Physics
, vol.13
, pp. 735-742
-
-
Jelinkova, H.1
Pasta, J.2
Nemec, M.3
-
18
-
-
2442472385
-
Mid-infrared laser sensors for mapping environment and combustions
-
Schade W, Willer U, Wondraczek L. Mid-infrared laser sensors for mapping environment and combustions. Glass Science and Technology 2003; 76: 109-114
-
(2003)
Glass Science and Technology
, vol.76
, pp. 109-114
-
-
Schade, W.1
Willer, U.2
Wondraczek, L.3
-
19
-
-
0032637076
-
MOVPE growth of a monolithic VCSEL at 1.56 μm in the InGaAlAs-InAlAs system lattice matched to InP
-
Debray JP, Sagnes I, Le Roux G, et al. MOVPE growth of a monolithic VCSEL at 1.56 μm in the InGaAlAs-InAlAs system lattice matched to InP. IEEE Photon. Technol. Lett. 1999; 11: 770-772
-
(1999)
IEEE Photon. Technol. Lett.
, vol.11
, pp. 770-772
-
-
Debray, J.P.1
Sagnes, I.2
Le Roux, G.3
-
21
-
-
0000201276
-
Improved electrical and thermal properties of InP-AlGaAsSb Bragg mirrors for long-wavelength vertical-cavity lasers
-
Almuneau G, Hall E, Mukaihara T, Nakagawa S, Luo CY, Clarke DR, Coldren LA. Improved electrical and thermal properties of InP-AlGaAsSb Bragg mirrors for long-wavelength vertical-cavity lasers. IEEE Photon. Technol. Lett. 2000; 12: 1322-1324
-
(2000)
IEEE Photon. Technol. Lett.
, vol.12
, pp. 1322-1324
-
-
Almuneau, G.1
Hall, E.2
Mukaihara, T.3
Nakagawa, S.4
Luo, C.Y.5
Clarke, D.R.6
Coldren, L.A.7
-
22
-
-
0032630713
-
Room temperature continuous wave operation under optical pumping of a 1.48 μm vertical cavity laser based on AlGaAsSb mirror
-
Harmand JC, Ungaro G, Sagnes I, et al. Room temperature continuous wave operation under optical pumping of a 1.48 μm vertical cavity laser based on AlGaAsSb mirror. J. Crystal Growth 1999; 201/202: 837-840
-
(1999)
J. Crystal Growth
, vol.201-202
, pp. 837-840
-
-
Harmand, J.C.1
Ungaro, G.2
Sagnes, I.3
-
23
-
-
0032181851
-
RT pulsed operation of metamorphic VCSEL at 1.55 μm
-
Boucart J, Starck C, Plais A, et al. RT pulsed operation of metamorphic VCSEL at 1.55 μm. Electron. Lett. 1998; 34: 2133-2135
-
(1998)
Electron. Lett.
, vol.34
, pp. 2133-2135
-
-
Boucart, J.1
Starck, C.2
Plais, A.3
-
25
-
-
0029406848
-
Room-temperature continuous-wave operation of 1.54 μm vertical-cavity lasers
-
Babic DI, Streubel K, Mirin RP, et al. Room-temperature continuous-wave operation of 1.54 μm vertical-cavity lasers. IEEE Photon. Technol. Lett. 1995; 7: 1225-1227
-
(1995)
IEEE Photon. Technol. Lett.
, vol.7
, pp. 1225-1227
-
-
Babic, D.I.1
Streubel, K.2
Mirin, R.P.3
-
26
-
-
0032633365
-
Growth and characterization of vertical cavity structures on InP with GaAsSb/AlAsSb Bragg mirrors for 1.55 μm emission
-
Genty F, Almuneau G, Chusseau L, Wilk A, Gaillard S, Boissier G, Grech P, Jacquet J. Growth and characterization of vertical cavity structures on InP with GaAsSb/AlAsSb Bragg mirrors for 1.55 μm emission. J. Crystal Growth 1998; 201/202: 1024-1027
-
(1998)
J. Crystal Growth
, vol.201-202
, pp. 1024-1027
-
-
Genty, F.1
Almuneau, G.2
Chusseau, L.3
Wilk, A.4
Gaillard, S.5
Boissier, G.6
Grech, P.7
Jacquet, J.8
-
28
-
-
0031554338
-
Wet thermal oxidation of AlAsSb against As/Sb ratio
-
Blum O, Hafich MJ, Klem JF, Baucom K, Allerman A. Wet thermal oxidation of AlAsSb against As/Sb ratio. Electron. Lett. 1997; 33: 1097-1099
-
(1997)
Electron. Lett.
, vol.33
, pp. 1097-1099
-
-
Blum, O.1
Hafich, M.J.2
Klem, J.F.3
Baucom, K.4
Allerman, A.5
-
29
-
-
0033872867
-
Optimisation of λ = 850 nm hybrid-mirror vertical-cavity surface-emitting laser with 37 μA threshold current
-
Langenfelder T, Grothe H. Optimisation of λ = 850 nm hybrid-mirror vertical-cavity surface-emitting laser with 37 μA threshold current. IEE Proc. Optoelectron. 2000; 147: 56-60
-
(2000)
IEE Proc. Optoelectron.
, vol.147
, pp. 56-60
-
-
Langenfelder, T.1
Grothe, H.2
-
30
-
-
0029632464
-
Selectively oxidized vertical-cavity surface-emitting lasers with 50-percent power conversion efficiency
-
Lear KL, Choquette KD, Schneider RP, Kilcoyne SP, Geib KM. Selectively oxidized vertical-cavity surface-emitting lasers with 50-percent power conversion efficiency. Electron. Lett. 1995; 31: 208-209
-
(1995)
Electron. Lett.
, vol.31
, pp. 208-209
-
-
Lear, K.L.1
Choquette, K.D.2
Schneider, R.P.3
Kilcoyne, S.P.4
Geib, K.M.5
-
33
-
-
0034135725
-
High-temperature optically pumped 1.55 μm VCSEL operating at 6 Gb/s
-
Keating A, Black A, Karim A, et al. High-temperature optically pumped 1.55 μm VCSEL operating at 6 Gb/s. IEEE Photon. Technol. Lett. 2000; 12: 116-118
-
(2000)
IEEE Photon. Technol. Lett.
, vol.12
, pp. 116-118
-
-
Keating, A.1
Black, A.2
Karim, A.3
-
34
-
-
0032137559
-
Bottom-emitting VCSEL's for high-CW optical output power
-
Grabherr M, Jäger R, Miller M, et al. Bottom-emitting VCSEL's for high-CW optical output power. IEEE Photon. Technol. Lett. 1998; 12: 1061-1063
-
(1998)
IEEE Photon. Technol. Lett.
, vol.12
, pp. 1061-1063
-
-
Grabherr, M.1
Jäger, R.2
Miller, M.3
-
36
-
-
2942595869
-
A high power InGaAs/GaAsP vertical-cavity surface-emitting laser and its temperature characteristics
-
Yan C, Ning Y, Qin L, et al. A high power InGaAs/GaAsP vertical-cavity surface-emitting laser and its temperature characteristics. Semicond. Sci. Technol. 2004; 19: 685-689
-
(2004)
Semicond. Sci. Technol.
, vol.19
, pp. 685-689
-
-
Yan, C.1
Ning, Y.2
Qin, L.3
-
37
-
-
0032178441
-
Monolithic 2D-VCSEL array with > 2W CW and > 5W pulsed output power
-
Francis D, Chen HL, Yuen W, Li G, Chang-Hasnain C. Monolithic 2D-VCSEL array with > 2W CW and > 5W pulsed output power. Electron. Lett. 1998; 34: 2132-2133
-
(1998)
Electron. Lett.
, vol.34
, pp. 2132-2133
-
-
Francis, D.1
Chen, H.L.2
Yuen, W.3
Li, G.4
Chang-Hasnain, C.5
-
38
-
-
0032047725
-
Undercut ridge structures: A novel approach to 1.3/1.55 μm vertical-cavity lasers designed for continuous-wave operation
-
Salet P, Plais A, Derouin E, Fortin C, Starck C, Jacquet J, Brillouet F. Undercut ridge structures: A novel approach to 1.3/1.55 μm vertical-cavity lasers designed for continuous-wave operation. IEE Proc.-Optoelectron. 1998; 145: 125-131
-
(1998)
IEE Proc.-Optoelectron.
, vol.145
, pp. 125-131
-
-
Salet, P.1
Plais, A.2
Derouin, E.3
Fortin, C.4
Starck, C.5
Jacquet, J.6
Brillouet, F.7
-
39
-
-
0346972480
-
Sub-mA threshold 1.5 μm VCSELs with epitaxial and dielectric DBR mirrors
-
Sun D, Fan W, Kner P, et al. Sub-mA threshold 1.5 μm VCSELs with epitaxial and dielectric DBR mirrors. IEEE Photon. Technol. Lett. 2003; 15: 1677-1679
-
(2003)
IEEE Photon. Technol. Lett.
, vol.15
, pp. 1677-1679
-
-
Sun, D.1
Fan, W.2
Kner, P.3
-
40
-
-
0043269252
-
HgCdTe molecular beam epitaxy material for microcavity light emitters: Application to gas detection in the 2-6 μm range
-
Zanatta JP, Noel F, Ballet P, Hdadach N, Million A, Destefanis G, Mottin E, Kopp C, Picard E, Hadji E. HgCdTe molecular beam epitaxy material for microcavity light emitters: Application to gas detection in the 2-6 μm range. J. Electron. Mat. 2003; 32: 602-607
-
(2003)
J. Electron. Mat.
, vol.32
, pp. 602-607
-
-
Zanatta, J.P.1
Noel, F.2
Ballet, P.3
Hdadach, N.4
Million, A.5
Destefanis, G.6
Mottin, E.7
Kopp, C.8
Picard, E.9
Hadji, E.10
-
41
-
-
0030212209
-
High-power single mode selectively oxidized vertical-cavity surface-emitting lasers
-
Weigl B, Grabherr M, Michalzik R, Reiner G, Ebeling KJ. High-power single mode selectively oxidized vertical-cavity surface-emitting lasers. IEEE Photon. Technol. Lett. 1996; 8: 971-973
-
(1996)
IEEE Photon. Technol. Lett.
, vol.8
, pp. 971-973
-
-
Weigl, B.1
Grabherr, M.2
Michalzik, R.3
Reiner, G.4
Ebeling, K.J.5
-
42
-
-
0027615246
-
Enhanced performance of offset-gain high-barrier vertical-cavity surface-emitting lasers
-
Young DB, Scott JW, Peters FH, et al. Enhanced performance of offset-gain high-barrier vertical-cavity surface-emitting lasers. IEEE J. Quantum Electron. 1993; 29: 2013-2021
-
(1993)
IEEE J. Quantum Electron.
, vol.29
, pp. 2013-2021
-
-
Young, D.B.1
Scott, J.W.2
Peters, F.H.3
-
43
-
-
0026897889
-
40 Å continuous tuning of a GaInAsP/InP vertical-cavity surface emitting laser using an external mirror
-
Yokouchi N, Miyamoto T, Uchida T, Inaba Y, Koyama F, Iga K. 40 Å continuous tuning of a GaInAsP/InP vertical-cavity surface emitting laser using an external mirror. IEEE Photon. Technol. Lett. 1992; 4: 701-703
-
(1992)
IEEE Photon. Technol. Lett.
, vol.4
, pp. 701-703
-
-
Yokouchi, N.1
Miyamoto, T.2
Uchida, T.3
Inaba, Y.4
Koyama, F.5
Iga, K.6
-
44
-
-
0000449606
-
High single-transverse-mode output from external-cavity surface emitting laser diodes
-
Hadley MA, Wilson GC, Lau KY, Smith JS. High single-transverse-mode output from external-cavity surface emitting laser diodes. Appl. Phys. Lett. 1993; 63: 1607-1609
-
(1993)
Appl. Phys. Lett.
, vol.63
, pp. 1607-1609
-
-
Hadley, M.A.1
Wilson, G.C.2
Lau, K.Y.3
Smith, J.S.4
-
45
-
-
0002815813
-
High single-mode output power from compact external microcavity surface-emitting laser diode
-
Wilson GC, Hadley MA, Smith JS, Lau KY. High single-mode output power from compact external microcavity surface-emitting laser diode. Appl. Phys. Lett. 1993; 63: 3265-3267
-
(1993)
Appl. Phys. Lett.
, vol.63
, pp. 3265-3267
-
-
Wilson, G.C.1
Hadley, M.A.2
Smith, J.S.3
Lau, K.Y.4
-
50
-
-
0038646069
-
8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm
-
Lutgen S, Albrecht T, Brick P, Reill W, Luft J, Späth W. 8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm. Appl. Phys. Lett. 2003; 82: 3620-3622
-
(2003)
Appl. Phys. Lett.
, vol.82
, pp. 3620-3622
-
-
Lutgen, S.1
Albrecht, T.2
Brick, P.3
Reill, W.4
Luft, J.5
Späth, W.6
-
51
-
-
0034409142
-
Diode-pumped broadband vertical-external-cavity surface-emitting semiconductor laser applied to high-sensitivity intracavity absorption spectroscopy
-
Garnache A, Kachanov AA, Stoeckel F, Houdre R. Diode-pumped broadband vertical-external-cavity surface-emitting semiconductor laser applied to high-sensitivity intracavity absorption spectroscopy. J. Opt. Soc. Amer. B. 2000; 17: 1589-1598
-
(2000)
J. Opt. Soc. Amer. B.
, vol.17
, pp. 1589-1598
-
-
Garnache, A.1
Kachanov, A.A.2
Stoeckel, F.3
Houdre, R.4
-
52
-
-
0038429174
-
1.5 μm high-power circular TEM00 surface-mitting laser operating in CW at 300K
-
Post-deadline paper #3
-
Garnache A, Hwang WY, Hoogland S, et al. 1.5 μm high-power circular TEM00 surface-mitting laser operating in CW at 300K. Proc. IEEE IPRM 2002; Post-deadline paper #3
-
(2002)
Proc. IEEE IPRM
-
-
Garnache, A.1
Hwang, W.Y.2
Hoogland, S.3
-
53
-
-
3042643202
-
High performance 1.55 μm broadband integrated dielectric-metal mirror
-
Symonds C, Dion J, Sagnes I, et al. High performance 1.55 μm broadband integrated dielectric-metal mirror. Electron. Lett. 2004; 40: 734-735
-
(2004)
Electron. Lett.
, vol.40
, pp. 734-735
-
-
Symonds, C.1
Dion, J.2
Sagnes, I.3
-
54
-
-
0035718360
-
Epitaxial Bragg mirrors for the mid-infrared and their applications
-
Heiss W, Schwarzl T, Roither J, et al. Epitaxial Bragg mirrors for the mid-infrared and their applications. Progress in Quantum Electronics. 2001; 25: 193-228
-
(2001)
Progress in Quantum Electronics.
, vol.25
, pp. 193-228
-
-
Heiss, W.1
Schwarzl, T.2
Roither, J.3
-
56
-
-
0000640073
-
2.6 μm optically pumped vertical-cavity surface-emitting laser in the CdHgTe system
-
Roux C, Hadji CE, Pautrat JL, 2.6 μm optically pumped vertical-cavity surface-emitting laser in the CdHgTe system. Appl. Phys. Lett. 1999; 75: 3763-3765
-
(1999)
Appl. Phys. Lett.
, vol.75
, pp. 3763-3765
-
-
Roux, C.1
Hadji, C.E.2
Pautrat, J.L.3
-
57
-
-
0030156641
-
Molecular beam epitaxial growth of strained AlGaInAs multi-quantum well lasers on InP
-
Mondry MJ, Tarsa EJ, Coldren LA. Molecular beam epitaxial growth of strained AlGaInAs multi-quantum well lasers on InP. J. of Electron. Mater. 1996; 25: 948-954
-
(1996)
J. of Electron. Mater.
, vol.25
, pp. 948-954
-
-
Mondry, M.J.1
Tarsa, E.J.2
Coldren, L.A.3
-
58
-
-
0030784170
-
Low-threshold and high-temperature operation of InGaAlAs-InP lasers
-
Chen TR, Chen PC, Ungar J, Newkirk MA, Oh S, BarChaim N. Low-threshold and high-temperature operation of InGaAlAs-InP lasers. IEEE Photon. Technol. Lett. 1997; 9: 17-18
-
(1997)
IEEE Photon. Technol. Lett.
, vol.9
, pp. 17-18
-
-
Chen, T.R.1
Chen, P.C.2
Ungar, J.3
Newkirk, M.A.4
Oh, S.5
BarChaim, N.6
-
59
-
-
0033530991
-
Record high characteristic temperature (T0 = 122K) of 1.55 μm strain-compensated AlGaInAs/AlGaInAs MQW lasers with AlAs/AlInAs multiquantum barrier
-
Ohnoki N, Okazaki G, Koyama F, Iga K. Record high characteristic temperature (T0 = 122K) of 1.55 μm strain-compensated AlGaInAs/AlGaInAs MQW lasers with AlAs/AlInAs multiquantum barrier. Electron. Lett. 1999; 35: 51-52
-
(1999)
Electron. Lett.
, vol.35
, pp. 51-52
-
-
Ohnoki, N.1
Okazaki, G.2
Koyama, F.3
Iga, K.4
-
60
-
-
0035399222
-
Long wavelength InGaAs-InGaAlAs-InP lasers grown in MBE
-
Kuang GK, Böhm G, Grau M, Rösel G, Amann MC. Long wavelength InGaAs-InGaAlAs-InP lasers grown in MBE. J. Crystal Growth 2001; 227-228: 334-337
-
(2001)
J. Crystal Growth
, vol.227-228
, pp. 334-337
-
-
Kuang, G.K.1
Böhm, G.2
Grau, M.3
Rösel, G.4
Amann, M.C.5
-
61
-
-
0031380328
-
Midinfrared vertical-cavity surface-emitting laser
-
Felix CL, Bewley WW, Vurgaftman I, et al. Midinfrared vertical-cavity surface-emitting laser. Appl. Phys. Lett. 1997; 71: 3483-3485
-
(1997)
Appl. Phys. Lett.
, vol.71
, pp. 3483-3485
-
-
Felix, C.L.1
Bewley, W.W.2
Vurgaftman, I.3
-
63
-
-
0032484829
-
Sb-based monolithic VCSEL operating near 2.2 μm at room temperature
-
Baranov AN, Rouillard Y, Boissier G, Grech P, Gaillard S, Alibert C. Sb-based monolithic VCSEL operating near 2.2 μm at room temperature. Electron. Lett. 1998; 34: 281-282
-
(1998)
Electron. Lett.
, vol.34
, pp. 281-282
-
-
Baranov, A.N.1
Rouillard, Y.2
Boissier, G.3
Grech, P.4
Gaillard, S.5
Alibert, C.6
-
64
-
-
0033877517
-
High temperature GaInSbAs/GaAlSbAs quantum well singlemode continuous wave lasers emitting near 2.3 μm
-
Yarekha DA, Glastre G, Perona A, et al. High temperature GaInSbAs/ GaAlSbAs quantum well singlemode continuous wave lasers emitting near 2.3 μm. Electron. Lett. 2000; 36: 537-539
-
(2000)
Electron. Lett.
, vol.36
, pp. 537-539
-
-
Yarekha, D.A.1
Glastre, G.2
Perona, A.3
-
65
-
-
0005314389
-
High power and good beam quality at 980 nm from a vertical external-cavity surface-emitting laser
-
Alford WJ, Raymond TD, Allerman AA. High power and good beam quality at 980 nm from a vertical external-cavity surface-emitting laser. J. Opt. Soc. Am. B 2002; 19: 663-666
-
(2002)
J. Opt. Soc. Am. B
, vol.19
, pp. 663-666
-
-
Alford, W.J.1
Raymond, T.D.2
Allerman, A.A.3
-
67
-
-
0038002443
-
0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser
-
Hastie JE, Hopkins J-M, Calvez S, et al. 0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser. IEEE Photon. Technol. Lett. 2003; 15: 894-896
-
(2003)
IEEE Photon. Technol. Lett.
, vol.15
, pp. 894-896
-
-
Hastie, J.E.1
Hopkins, J.-M.2
Calvez, S.3
-
68
-
-
0037810857
-
Room temperature CW operation at 1.55 μm of a monolithic InP-based optically-pumped Vertical-External-Cavity Surface-Emitting lasers grown by MOCVD
-
Post-deadline paper WB1.7
-
Symonds C, Sagnes I, Oudar J-L, et al. Room temperature CW operation at 1.55 μm of a monolithic InP-based optically-pumped Vertical-External-Cavity Surface-Emitting lasers grown by MOCVD. Proc. IEEE IPRM 2003; Post-deadline paper WB1.7: 259-260
-
(2003)
Proc. IEEE IPRM
, pp. 259-260
-
-
Symonds, C.1
Sagnes, I.2
Oudar, J.-L.3
-
69
-
-
0037421791
-
Low threshold, room temperature laser diode pumped Sb-based VECSEL emitting around 2.1 2mm
-
Cerutti L, Garnache A, Genty F, Ouvrard A, Alibert C. Low threshold, room temperature laser diode pumped Sb-based VECSEL emitting around 2.1 2mm. Electron. Lett. 2002; 39: 290-292
-
(2002)
Electron. Lett.
, vol.39
, pp. 290-292
-
-
Cerutti, L.1
Garnache, A.2
Genty, F.3
Ouvrard, A.4
Alibert, C.5
-
71
-
-
0036476955
-
Type-I quantum-well VCSEL structure on GaSb emitting in the 2-2.5 μm range
-
Genty F, Cerutti L, Garnache A, et al. Type-I quantum-well VCSEL structure on GaSb emitting in the 2-2.5 μm range. IEE Proc. Optoelectron. 2002; 149: 22-26
-
(2002)
IEE Proc. Optoelectron.
, vol.149
, pp. 22-26
-
-
Genty, F.1
Cerutti, L.2
Garnache, A.3
-
72
-
-
2942720950
-
High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3 μm
-
Cerutti L, Garnache A, Ouvrard A, Genty F. High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3 μm. J. Crystal Growth 2004; 268: 128-134
-
(2004)
J. Crystal Growth
, vol.268
, pp. 128-134
-
-
Cerutti, L.1
Garnache, A.2
Ouvrard, A.3
Genty, F.4
|