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Volumn 118, Issue , 2006, Pages 159-188

VCSELs emitting in the 2-3 μm wavelength range

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EID: 33845287315     PISSN: 03424111     EISSN: 15561534     Source Type: Book Series    
DOI: 10.1007/1-84628-209-8_4     Document Type: Article
Times cited : (4)

References (74)
  • 4
    • 0001906523 scopus 로고
    • Longitudinal injection-plasma laser of InSb
    • Melngailis I. Longitudinal injection-plasma laser of InSb. Appl. Phys. Lett. 1965; 6: 59-61
    • (1965) Appl. Phys. Lett. , vol.6 , pp. 59-61
    • Melngailis, I.1
  • 8
    • 0027599474 scopus 로고
    • Near room temperature continuous-wave lasing characteristic of GaInAsP/InP surface emitting laser
    • Baba T, Yogo Y, Koyama F, Iga K. Near room temperature continuous-wave lasing characteristic of GaInAsP/InP surface emitting laser. Electron. Lett. 1993; 29: 913-914
    • (1993) Electron. Lett. , vol.29 , pp. 913-914
    • Baba, T.1    Yogo, Y.2    Koyama, F.3    Iga, K.4
  • 9
    • 0037380486 scopus 로고    scopus 로고
    • InP-based VCSEL technology covering the wavelength range from 1.3 to 2.0 μm
    • Boehm G, Ortsiefer M, Shau R, et al. InP-based VCSEL technology covering the wavelength range from 1.3 to 2.0 μm. J. Crystal Growth 2003; 251: 748-753
    • (2003) J. Crystal Growth , vol.251 , pp. 748-753
    • Boehm, G.1    Ortsiefer, M.2    Shau, R.3
  • 10
    • 18744423255 scopus 로고    scopus 로고
    • 6μm vertical cavity surface emitting laser based on IV-VI semiconductor compounds
    • Schwarzl T, Heiss W, Springholz G, Aigle M., Pascher H. 6μm vertical cavity surface emitting laser based on IV-VI semiconductor compounds. Electron. Lett. 2000; 36: 322-324
    • (2000) Electron. Lett. , vol.36 , pp. 322-324
    • Schwarzl, T.1    Heiss, W.2    Springholz, G.3    Aigle, M.4    Pascher, H.5
  • 11
    • 3943109587 scopus 로고    scopus 로고
    • Vertical-cavity surface emitting lasers in the 8-μm midinfrared spectral range with continuous-wave and pulsed emission
    • Fürst J, Schwarzl T, Böberl M, Pascher H, Springholtz G, Heiss W. Vertical-cavity surface emitting lasers in the 8-μm midinfrared spectral range with continuous-wave and pulsed emission. IEEE J. Quantum Electron. 2004; 40: 966-969
    • (2004) IEEE J. Quantum Electron. , vol.40 , pp. 966-969
    • Fürst, J.1    Schwarzl, T.2    Böberl, M.3    Pascher, H.4    Springholtz, G.5    Heiss, W.6
  • 13
    • 0034812993 scopus 로고    scopus 로고
    • Oxygen measurements at high pressures with verticl caviy surface-emitting lasers
    • Wang J, Sanders ST, Jefries JB, et al. Oxygen measurements at high pressures with verticl caviy surface-emitting lasers. Appl. Phys. B. 2001; 72: 865-872
    • (2001) Appl. Phys. B. , vol.72 , pp. 865-872
    • Wang, J.1    Sanders, S.T.2    Jefries, J.B.3
  • 14
    • 79956045555 scopus 로고    scopus 로고
    • High power and high brightness from an optically pumped InAs/InGaSb Type-II midinfrared laser with low confinement
    • Kaspi R, Ongstad A, Dente GC, et al. High power and high brightness from an optically pumped InAs/InGaSb Type-II midinfrared laser with low confinement. Appl. Phys. Lett. 2002; 81: 406-408
    • (2002) Appl. Phys. Lett. , vol.81 , pp. 406-408
    • Kaspi, R.1    Ongstad, A.2    Dente, G.C.3
  • 17
    • 0037803488 scopus 로고    scopus 로고
    • Different influence of long and short mid-infrared laser pulses on eye tissue
    • Jelinkova H, Pasta J, Nemec M, et al. Different influence of long and short mid-infrared laser pulses on eye tissue. Laser Physics 2003; 13: 735-742
    • (2003) Laser Physics , vol.13 , pp. 735-742
    • Jelinkova, H.1    Pasta, J.2    Nemec, M.3
  • 18
    • 2442472385 scopus 로고    scopus 로고
    • Mid-infrared laser sensors for mapping environment and combustions
    • Schade W, Willer U, Wondraczek L. Mid-infrared laser sensors for mapping environment and combustions. Glass Science and Technology 2003; 76: 109-114
    • (2003) Glass Science and Technology , vol.76 , pp. 109-114
    • Schade, W.1    Willer, U.2    Wondraczek, L.3
  • 19
    • 0032637076 scopus 로고    scopus 로고
    • MOVPE growth of a monolithic VCSEL at 1.56 μm in the InGaAlAs-InAlAs system lattice matched to InP
    • Debray JP, Sagnes I, Le Roux G, et al. MOVPE growth of a monolithic VCSEL at 1.56 μm in the InGaAlAs-InAlAs system lattice matched to InP. IEEE Photon. Technol. Lett. 1999; 11: 770-772
    • (1999) IEEE Photon. Technol. Lett. , vol.11 , pp. 770-772
    • Debray, J.P.1    Sagnes, I.2    Le Roux, G.3
  • 22
    • 0032630713 scopus 로고    scopus 로고
    • Room temperature continuous wave operation under optical pumping of a 1.48 μm vertical cavity laser based on AlGaAsSb mirror
    • Harmand JC, Ungaro G, Sagnes I, et al. Room temperature continuous wave operation under optical pumping of a 1.48 μm vertical cavity laser based on AlGaAsSb mirror. J. Crystal Growth 1999; 201/202: 837-840
    • (1999) J. Crystal Growth , vol.201-202 , pp. 837-840
    • Harmand, J.C.1    Ungaro, G.2    Sagnes, I.3
  • 23
    • 0032181851 scopus 로고    scopus 로고
    • RT pulsed operation of metamorphic VCSEL at 1.55 μm
    • Boucart J, Starck C, Plais A, et al. RT pulsed operation of metamorphic VCSEL at 1.55 μm. Electron. Lett. 1998; 34: 2133-2135
    • (1998) Electron. Lett. , vol.34 , pp. 2133-2135
    • Boucart, J.1    Starck, C.2    Plais, A.3
  • 25
    • 0029406848 scopus 로고
    • Room-temperature continuous-wave operation of 1.54 μm vertical-cavity lasers
    • Babic DI, Streubel K, Mirin RP, et al. Room-temperature continuous-wave operation of 1.54 μm vertical-cavity lasers. IEEE Photon. Technol. Lett. 1995; 7: 1225-1227
    • (1995) IEEE Photon. Technol. Lett. , vol.7 , pp. 1225-1227
    • Babic, D.I.1    Streubel, K.2    Mirin, R.P.3
  • 26
    • 0032633365 scopus 로고    scopus 로고
    • Growth and characterization of vertical cavity structures on InP with GaAsSb/AlAsSb Bragg mirrors for 1.55 μm emission
    • Genty F, Almuneau G, Chusseau L, Wilk A, Gaillard S, Boissier G, Grech P, Jacquet J. Growth and characterization of vertical cavity structures on InP with GaAsSb/AlAsSb Bragg mirrors for 1.55 μm emission. J. Crystal Growth 1998; 201/202: 1024-1027
    • (1998) J. Crystal Growth , vol.201-202 , pp. 1024-1027
    • Genty, F.1    Almuneau, G.2    Chusseau, L.3    Wilk, A.4    Gaillard, S.5    Boissier, G.6    Grech, P.7    Jacquet, J.8
  • 29
    • 0033872867 scopus 로고    scopus 로고
    • Optimisation of λ = 850 nm hybrid-mirror vertical-cavity surface-emitting laser with 37 μA threshold current
    • Langenfelder T, Grothe H. Optimisation of λ = 850 nm hybrid-mirror vertical-cavity surface-emitting laser with 37 μA threshold current. IEE Proc. Optoelectron. 2000; 147: 56-60
    • (2000) IEE Proc. Optoelectron. , vol.147 , pp. 56-60
    • Langenfelder, T.1    Grothe, H.2
  • 30
    • 0029632464 scopus 로고
    • Selectively oxidized vertical-cavity surface-emitting lasers with 50-percent power conversion efficiency
    • Lear KL, Choquette KD, Schneider RP, Kilcoyne SP, Geib KM. Selectively oxidized vertical-cavity surface-emitting lasers with 50-percent power conversion efficiency. Electron. Lett. 1995; 31: 208-209
    • (1995) Electron. Lett. , vol.31 , pp. 208-209
    • Lear, K.L.1    Choquette, K.D.2    Schneider, R.P.3    Kilcoyne, S.P.4    Geib, K.M.5
  • 33
    • 0034135725 scopus 로고    scopus 로고
    • High-temperature optically pumped 1.55 μm VCSEL operating at 6 Gb/s
    • Keating A, Black A, Karim A, et al. High-temperature optically pumped 1.55 μm VCSEL operating at 6 Gb/s. IEEE Photon. Technol. Lett. 2000; 12: 116-118
    • (2000) IEEE Photon. Technol. Lett. , vol.12 , pp. 116-118
    • Keating, A.1    Black, A.2    Karim, A.3
  • 34
    • 0032137559 scopus 로고    scopus 로고
    • Bottom-emitting VCSEL's for high-CW optical output power
    • Grabherr M, Jäger R, Miller M, et al. Bottom-emitting VCSEL's for high-CW optical output power. IEEE Photon. Technol. Lett. 1998; 12: 1061-1063
    • (1998) IEEE Photon. Technol. Lett. , vol.12 , pp. 1061-1063
    • Grabherr, M.1    Jäger, R.2    Miller, M.3
  • 36
    • 2942595869 scopus 로고    scopus 로고
    • A high power InGaAs/GaAsP vertical-cavity surface-emitting laser and its temperature characteristics
    • Yan C, Ning Y, Qin L, et al. A high power InGaAs/GaAsP vertical-cavity surface-emitting laser and its temperature characteristics. Semicond. Sci. Technol. 2004; 19: 685-689
    • (2004) Semicond. Sci. Technol. , vol.19 , pp. 685-689
    • Yan, C.1    Ning, Y.2    Qin, L.3
  • 37
    • 0032178441 scopus 로고    scopus 로고
    • Monolithic 2D-VCSEL array with > 2W CW and > 5W pulsed output power
    • Francis D, Chen HL, Yuen W, Li G, Chang-Hasnain C. Monolithic 2D-VCSEL array with > 2W CW and > 5W pulsed output power. Electron. Lett. 1998; 34: 2132-2133
    • (1998) Electron. Lett. , vol.34 , pp. 2132-2133
    • Francis, D.1    Chen, H.L.2    Yuen, W.3    Li, G.4    Chang-Hasnain, C.5
  • 38
    • 0032047725 scopus 로고    scopus 로고
    • Undercut ridge structures: A novel approach to 1.3/1.55 μm vertical-cavity lasers designed for continuous-wave operation
    • Salet P, Plais A, Derouin E, Fortin C, Starck C, Jacquet J, Brillouet F. Undercut ridge structures: A novel approach to 1.3/1.55 μm vertical-cavity lasers designed for continuous-wave operation. IEE Proc.-Optoelectron. 1998; 145: 125-131
    • (1998) IEE Proc.-Optoelectron. , vol.145 , pp. 125-131
    • Salet, P.1    Plais, A.2    Derouin, E.3    Fortin, C.4    Starck, C.5    Jacquet, J.6    Brillouet, F.7
  • 39
    • 0346972480 scopus 로고    scopus 로고
    • Sub-mA threshold 1.5 μm VCSELs with epitaxial and dielectric DBR mirrors
    • Sun D, Fan W, Kner P, et al. Sub-mA threshold 1.5 μm VCSELs with epitaxial and dielectric DBR mirrors. IEEE Photon. Technol. Lett. 2003; 15: 1677-1679
    • (2003) IEEE Photon. Technol. Lett. , vol.15 , pp. 1677-1679
    • Sun, D.1    Fan, W.2    Kner, P.3
  • 42
    • 0027615246 scopus 로고
    • Enhanced performance of offset-gain high-barrier vertical-cavity surface-emitting lasers
    • Young DB, Scott JW, Peters FH, et al. Enhanced performance of offset-gain high-barrier vertical-cavity surface-emitting lasers. IEEE J. Quantum Electron. 1993; 29: 2013-2021
    • (1993) IEEE J. Quantum Electron. , vol.29 , pp. 2013-2021
    • Young, D.B.1    Scott, J.W.2    Peters, F.H.3
  • 43
    • 0026897889 scopus 로고
    • 40 Å continuous tuning of a GaInAsP/InP vertical-cavity surface emitting laser using an external mirror
    • Yokouchi N, Miyamoto T, Uchida T, Inaba Y, Koyama F, Iga K. 40 Å continuous tuning of a GaInAsP/InP vertical-cavity surface emitting laser using an external mirror. IEEE Photon. Technol. Lett. 1992; 4: 701-703
    • (1992) IEEE Photon. Technol. Lett. , vol.4 , pp. 701-703
    • Yokouchi, N.1    Miyamoto, T.2    Uchida, T.3    Inaba, Y.4    Koyama, F.5    Iga, K.6
  • 44
    • 0000449606 scopus 로고
    • High single-transverse-mode output from external-cavity surface emitting laser diodes
    • Hadley MA, Wilson GC, Lau KY, Smith JS. High single-transverse-mode output from external-cavity surface emitting laser diodes. Appl. Phys. Lett. 1993; 63: 1607-1609
    • (1993) Appl. Phys. Lett. , vol.63 , pp. 1607-1609
    • Hadley, M.A.1    Wilson, G.C.2    Lau, K.Y.3    Smith, J.S.4
  • 45
    • 0002815813 scopus 로고
    • High single-mode output power from compact external microcavity surface-emitting laser diode
    • Wilson GC, Hadley MA, Smith JS, Lau KY. High single-mode output power from compact external microcavity surface-emitting laser diode. Appl. Phys. Lett. 1993; 63: 3265-3267
    • (1993) Appl. Phys. Lett. , vol.63 , pp. 3265-3267
    • Wilson, G.C.1    Hadley, M.A.2    Smith, J.S.3    Lau, K.Y.4
  • 46
    • 0342757830 scopus 로고    scopus 로고
    • Single-mode operation from an external cavity controlled vertical-cavity surface-emitting laser
    • Giudice GE, Kuksenkov DV, Grave de Peralda L, Temkin H. Single-mode operation from an external cavity controlled vertical-cavity surface-emitting laser. IEEE Photon. Technol. Lett. 1999; 11: 1545-1547
    • (1999) IEEE Photon. Technol. Lett. , vol.11 , pp. 1545-1547
    • Giudice, G.E.1    Kuksenkov, D.V.2    Grave de Peralda, L.3    Temkin, H.4
  • 51
    • 0034409142 scopus 로고    scopus 로고
    • Diode-pumped broadband vertical-external-cavity surface-emitting semiconductor laser applied to high-sensitivity intracavity absorption spectroscopy
    • Garnache A, Kachanov AA, Stoeckel F, Houdre R. Diode-pumped broadband vertical-external-cavity surface-emitting semiconductor laser applied to high-sensitivity intracavity absorption spectroscopy. J. Opt. Soc. Amer. B. 2000; 17: 1589-1598
    • (2000) J. Opt. Soc. Amer. B. , vol.17 , pp. 1589-1598
    • Garnache, A.1    Kachanov, A.A.2    Stoeckel, F.3    Houdre, R.4
  • 52
    • 0038429174 scopus 로고    scopus 로고
    • 1.5 μm high-power circular TEM00 surface-mitting laser operating in CW at 300K
    • Post-deadline paper #3
    • Garnache A, Hwang WY, Hoogland S, et al. 1.5 μm high-power circular TEM00 surface-mitting laser operating in CW at 300K. Proc. IEEE IPRM 2002; Post-deadline paper #3
    • (2002) Proc. IEEE IPRM
    • Garnache, A.1    Hwang, W.Y.2    Hoogland, S.3
  • 53
    • 3042643202 scopus 로고    scopus 로고
    • High performance 1.55 μm broadband integrated dielectric-metal mirror
    • Symonds C, Dion J, Sagnes I, et al. High performance 1.55 μm broadband integrated dielectric-metal mirror. Electron. Lett. 2004; 40: 734-735
    • (2004) Electron. Lett. , vol.40 , pp. 734-735
    • Symonds, C.1    Dion, J.2    Sagnes, I.3
  • 54
    • 0035718360 scopus 로고    scopus 로고
    • Epitaxial Bragg mirrors for the mid-infrared and their applications
    • Heiss W, Schwarzl T, Roither J, et al. Epitaxial Bragg mirrors for the mid-infrared and their applications. Progress in Quantum Electronics. 2001; 25: 193-228
    • (2001) Progress in Quantum Electronics. , vol.25 , pp. 193-228
    • Heiss, W.1    Schwarzl, T.2    Roither, J.3
  • 55
    • 0000715897 scopus 로고    scopus 로고
    • Photopump infrared vertical-cavity surface-emitting laser
    • Hadji E, Bleuse J, Magnea N, Pautrat JL. Photopump infrared vertical-cavity surface-emitting laser. Appl. Phys. Lett. 1996; 68: 2480-2482
    • (1996) Appl. Phys. Lett. , vol.68 , pp. 2480-2482
    • Hadji, E.1    Bleuse, J.2    Magnea, N.3    Pautrat, J.L.4
  • 56
    • 0000640073 scopus 로고    scopus 로고
    • 2.6 μm optically pumped vertical-cavity surface-emitting laser in the CdHgTe system
    • Roux C, Hadji CE, Pautrat JL, 2.6 μm optically pumped vertical-cavity surface-emitting laser in the CdHgTe system. Appl. Phys. Lett. 1999; 75: 3763-3765
    • (1999) Appl. Phys. Lett. , vol.75 , pp. 3763-3765
    • Roux, C.1    Hadji, C.E.2    Pautrat, J.L.3
  • 57
    • 0030156641 scopus 로고    scopus 로고
    • Molecular beam epitaxial growth of strained AlGaInAs multi-quantum well lasers on InP
    • Mondry MJ, Tarsa EJ, Coldren LA. Molecular beam epitaxial growth of strained AlGaInAs multi-quantum well lasers on InP. J. of Electron. Mater. 1996; 25: 948-954
    • (1996) J. of Electron. Mater. , vol.25 , pp. 948-954
    • Mondry, M.J.1    Tarsa, E.J.2    Coldren, L.A.3
  • 59
    • 0033530991 scopus 로고    scopus 로고
    • Record high characteristic temperature (T0 = 122K) of 1.55 μm strain-compensated AlGaInAs/AlGaInAs MQW lasers with AlAs/AlInAs multiquantum barrier
    • Ohnoki N, Okazaki G, Koyama F, Iga K. Record high characteristic temperature (T0 = 122K) of 1.55 μm strain-compensated AlGaInAs/AlGaInAs MQW lasers with AlAs/AlInAs multiquantum barrier. Electron. Lett. 1999; 35: 51-52
    • (1999) Electron. Lett. , vol.35 , pp. 51-52
    • Ohnoki, N.1    Okazaki, G.2    Koyama, F.3    Iga, K.4
  • 61
    • 0031380328 scopus 로고    scopus 로고
    • Midinfrared vertical-cavity surface-emitting laser
    • Felix CL, Bewley WW, Vurgaftman I, et al. Midinfrared vertical-cavity surface-emitting laser. Appl. Phys. Lett. 1997; 71: 3483-3485
    • (1997) Appl. Phys. Lett. , vol.71 , pp. 3483-3485
    • Felix, C.L.1    Bewley, W.W.2    Vurgaftman, I.3
  • 64
    • 0033877517 scopus 로고    scopus 로고
    • High temperature GaInSbAs/GaAlSbAs quantum well singlemode continuous wave lasers emitting near 2.3 μm
    • Yarekha DA, Glastre G, Perona A, et al. High temperature GaInSbAs/ GaAlSbAs quantum well singlemode continuous wave lasers emitting near 2.3 μm. Electron. Lett. 2000; 36: 537-539
    • (2000) Electron. Lett. , vol.36 , pp. 537-539
    • Yarekha, D.A.1    Glastre, G.2    Perona, A.3
  • 65
    • 0005314389 scopus 로고    scopus 로고
    • High power and good beam quality at 980 nm from a vertical external-cavity surface-emitting laser
    • Alford WJ, Raymond TD, Allerman AA. High power and good beam quality at 980 nm from a vertical external-cavity surface-emitting laser. J. Opt. Soc. Am. B 2002; 19: 663-666
    • (2002) J. Opt. Soc. Am. B , vol.19 , pp. 663-666
    • Alford, W.J.1    Raymond, T.D.2    Allerman, A.A.3
  • 67
    • 0038002443 scopus 로고    scopus 로고
    • 0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser
    • Hastie JE, Hopkins J-M, Calvez S, et al. 0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser. IEEE Photon. Technol. Lett. 2003; 15: 894-896
    • (2003) IEEE Photon. Technol. Lett. , vol.15 , pp. 894-896
    • Hastie, J.E.1    Hopkins, J.-M.2    Calvez, S.3
  • 68
    • 0037810857 scopus 로고    scopus 로고
    • Room temperature CW operation at 1.55 μm of a monolithic InP-based optically-pumped Vertical-External-Cavity Surface-Emitting lasers grown by MOCVD
    • Post-deadline paper WB1.7
    • Symonds C, Sagnes I, Oudar J-L, et al. Room temperature CW operation at 1.55 μm of a monolithic InP-based optically-pumped Vertical-External-Cavity Surface-Emitting lasers grown by MOCVD. Proc. IEEE IPRM 2003; Post-deadline paper WB1.7: 259-260
    • (2003) Proc. IEEE IPRM , pp. 259-260
    • Symonds, C.1    Sagnes, I.2    Oudar, J.-L.3
  • 69
    • 0037421791 scopus 로고    scopus 로고
    • Low threshold, room temperature laser diode pumped Sb-based VECSEL emitting around 2.1 2mm
    • Cerutti L, Garnache A, Genty F, Ouvrard A, Alibert C. Low threshold, room temperature laser diode pumped Sb-based VECSEL emitting around 2.1 2mm. Electron. Lett. 2002; 39: 290-292
    • (2002) Electron. Lett. , vol.39 , pp. 290-292
    • Cerutti, L.1    Garnache, A.2    Genty, F.3    Ouvrard, A.4    Alibert, C.5
  • 71
    • 0036476955 scopus 로고    scopus 로고
    • Type-I quantum-well VCSEL structure on GaSb emitting in the 2-2.5 μm range
    • Genty F, Cerutti L, Garnache A, et al. Type-I quantum-well VCSEL structure on GaSb emitting in the 2-2.5 μm range. IEE Proc. Optoelectron. 2002; 149: 22-26
    • (2002) IEE Proc. Optoelectron. , vol.149 , pp. 22-26
    • Genty, F.1    Cerutti, L.2    Garnache, A.3
  • 72
    • 2942720950 scopus 로고    scopus 로고
    • High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3 μm
    • Cerutti L, Garnache A, Ouvrard A, Genty F. High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3 μm. J. Crystal Growth 2004; 268: 128-134
    • (2004) J. Crystal Growth , vol.268 , pp. 128-134
    • Cerutti, L.1    Garnache, A.2    Ouvrard, A.3    Genty, F.4


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