Growth and characterization of vertical cavity structures on InP with GaAsSb/AlAsSb Bragg mirrors for 1.55 μm emission

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 1024-1027

  Genty, Frédéric ^a,b   Almuneau, Guilhem ^a   Chusseau, Laurent ^a   Arnaud Wilk, ^a   Gaillard, Serge ^a   Boissier, Guilhem ^a   Grech, Pierre ^a   Jacquet, Joel ^b  

^a UNIVERSITÉ MONTPELLIER II   (France)

^b NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY ALLOYS; ELECTROLUMINESCENCE; MIRRORS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR LASERS; SEMICONDUCTOR SUPERLATTICES;

ANTIMONIDE ALLOYS; LATTICE MATCHING; VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

MOLECULAR BEAM EPITAXY;

EID: 0032633365     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01513-9     Document Type: Article

References (8)

1. Almuneau G., Genty F., Chusseau L., Bertru N., Fraisse B., Jacquet J. Electron. Lett. 33:1997;1227.
2. Babic D.I., Piprek J., Streubel K., Mirin R.P., Margalit N.M., Mars D.E., Bowers J.E., Hu E.L. IEEE J. Quantum. Electron. QE-33:1997;1369.
3. Blum O., Klem J.F., Lear K.L., Vawter G.A., Kurtz W. Electron. Lett. 33:1997;1878.
4. Koeth J., Dietrich R., Forchel A. Appl. Phys. Lett. 72:1998;1638.
5. Mochizuki K., Nishinaga T. Jpn. J. Appl. Phys. 27:1988;1585.
6. Waterman J.R., Shanabrook B.V., Wagner R.J. J. Vac. Sci. Technol. B. 10:1992;895.
7. Genty F., Almuneau G., Bertru N., Chusseau L., Grech P., Cot D., Jacquet J. J. Crystal Growth. 183:1998;15.
8. Tai K., Yang L., Wang Y.H., Wynn J.D., Cho A.Y. Appl. Phys. Lett. 56:1990;2496.