-
1
-
-
0001505177
-
(GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser with ultrabroad temperature operation range
-
A. Wagner, C. Ellmers, F. Höhnsdorf, J. Koch, C. Agert, S. Leu, M. Hofmann, W. Stolz, and W. W. Rühle, "(GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser with ultrabroad temperature operation range," Appl. Phys. Lett., vol. 76, pp. 271-272, 2000.
-
(2000)
Appl. Phys. Lett.
, vol.76
, pp. 271-272
-
-
Wagner, A.1
Ellmers, C.2
Höhnsdorf, F.3
Koch, J.4
Agert, C.5
Leu, S.6
Hofmann, M.7
Stolz, W.8
Rühle, W.W.9
-
2
-
-
0032638439
-
Room-temperature pulsed operation of GaAsSb/GaAs vertical-cavity surface-emitting lasers
-
T. Anan, M. Yamada, K. Tokutome, S. Sugou, K. Nishi, and A. Kamei, "Room-temperature pulsed operation of GaAsSb/GaAs vertical-cavity surface-emitting lasers," Electron. Lett., vol. 35, pp. 903-904, 1999.
-
(1999)
Electron. Lett.
, vol.35
, pp. 903-904
-
-
Anan, T.1
Yamada, M.2
Tokutome, K.3
Sugou, S.4
Nishi, K.5
Kamei, A.6
-
3
-
-
0347845815
-
Abrupt self-switching in fused GaAs/InP vertical-cavity lasers
-
Baltimore, MD
-
J. Piprek, A. Black, P. Abraham, E. L. Hu, and J. E. Bowers, "Abrupt self-switching in fused GaAs/InP vertical-cavity lasers," in Tech. Dig. IEEE. Conf. on Lasers and Electro-Optics, Baltimore, MD, 1999, pp. 458-459.
-
(1999)
Tech. Dig. IEEE. Conf. on Lasers and Electro-Optics
, pp. 458-459
-
-
Piprek, J.1
Black, A.2
Abraham, P.3
Hu, E.L.4
Bowers, J.E.5
-
4
-
-
0033123732
-
Metamorphic DBR and tunnel-junction injection: A CW RT monolithic long-wavelength VCSEL
-
J. Boucart, C. Starck, F. Gaborit, A. Plais, N. Bouché, E. Derouin, J. C. Remy, J. Bonnet-Gamard, L. Goldstein, C. Fortin, D. Carpentier, P. Salet, F. Brillouet, and J. Jacquet, "Metamorphic DBR and tunnel-junction injection: A CW RT monolithic long-wavelength VCSEL," IEEE J. Select. Topics Quantum Electron., vol. 5, pp. 520-529, 1999.
-
(1999)
IEEE J. Select. Topics Quantum Electron.
, vol.5
, pp. 520-529
-
-
Boucart, J.1
Starck, C.2
Gaborit, F.3
Plais, A.4
Bouché, N.5
Derouin, E.6
Remy, J.C.7
Bonnet-Gamard, J.8
Goldstein, L.9
Fortin, C.10
Carpentier, D.11
Salet, P.12
Brillouet, F.13
Jacquet, J.14
-
5
-
-
0000687320
-
Low-threshold index-guided 1.5 μm long-wavelength vertical-cavity surface-emitting laser with high efficiency
-
M. Ortsiefer, R. Shau, G. Böhm, F. Köhler, and M. C. Amann, "Low-threshold index-guided 1.5 μm long-wavelength vertical-cavity surface-emitting laser with high efficiency," Appl. Phys. Lett., vol. 76, pp. 2179-2181, 2000.
-
(2000)
Appl. Phys. Lett.
, vol.76
, pp. 2179-2181
-
-
Ortsiefer, M.1
Shau, R.2
Böhm, G.3
Köhler, F.4
Amann, M.C.5
-
6
-
-
0032685221
-
Electrically-pumped, single-epitaxial VCSEL's at 1.55 μm with Sb-based mirrors
-
E. Hall, G. Almuneau, J. K. Kim, O. Sjölund, H. Kroemer, and L. A. Coldren, "Electrically-pumped, single-epitaxial VCSEL's at 1.55 μm with Sb-based mirrors," Electron. Lett., vol. 35, pp. 1337-1338, 1999.
-
(1999)
Electron. Lett.
, vol.35
, pp. 1337-1338
-
-
Hall, E.1
Almuneau, G.2
Kim, J.K.3
Sjölund, O.4
Kroemer, H.5
Coldren, L.A.6
-
7
-
-
0032631155
-
Room-temperature, electrically-pumped multiple-active-region VCSEL's with high differential efficiency at 1.55 μm
-
J. K. Kim, E. Hall, O. Sjölund, G. Almuneau, and L. A. Coldren, "Room-temperature, electrically-pumped multiple-active-region VCSEL's with high differential efficiency at 1.55 μm," Electron. Lett., vol. 35, pp. 1084-1085, 1999.
-
(1999)
Electron. Lett.
, vol.35
, pp. 1084-1085
-
-
Kim, J.K.1
Hall, E.2
Sjölund, O.3
Almuneau, G.4
Coldren, L.A.5
-
8
-
-
0031551222
-
Molecular beam epitaxy growth of 1.3 μm high-reflectivity AlGaAsSb/AlAsSb Bragg mirror
-
G. Almuneau, F. Genty, L. Chusseau, N. Bertru, B. Fraisse, and J. Jacquet, "Molecular beam epitaxy growth of 1.3 μm high-reflectivity AlGaAsSb/AlAsSb Bragg mirror," Electron. Lett., vol. 33, pp. 1227-1228, 1997.
-
(1997)
Electron. Lett.
, vol.33
, pp. 1227-1228
-
-
Almuneau, G.1
Genty, F.2
Chusseau, L.3
Bertru, N.4
Fraisse, B.5
Jacquet, J.6
-
9
-
-
0033909282
-
Accurate control of Sb composition in AlGaAsSb alloys on InP substrates by molecular beam epitaxy
-
G. Almuneau, E. Hall, S. Mathis, and L. A. Coldren, "Accurate control of Sb composition in AlGaAsSb alloys on InP substrates by molecular beam epitaxy," J. Cryst. Growth, vol. 208, pp. 113-116, 2000.
-
(2000)
J. Cryst. Growth
, vol.208
, pp. 113-116
-
-
Almuneau, G.1
Hall, E.2
Mathis, S.3
Coldren, L.A.4
-
10
-
-
0001239816
-
Thermal conductivity of lateral epitaxial overgrown GaN films
-
C.-Y. Luo, H. Marchand, D. R. Clarke, and S. P. DenBaars, "Thermal conductivity of lateral epitaxial overgrown GaN films," Appl. Phys. Lett., vol. 75, pp. 4151-4153, 1999.
-
(1999)
Appl. Phys. Lett.
, vol.75
, pp. 4151-4153
-
-
Luo, C.-Y.1
Marchand, H.2
Clarke, D.R.3
DenBaars, S.P.4
-
11
-
-
0032096780
-
Electrical and optical characteristics of n-type-doped distributed Bragg mirrors on InP
-
I. F. L. Dias, B. Nabet, A. Kohl, J. L. Benchimol, and J. C. Harmand, "Electrical and optical characteristics of n-type-doped distributed Bragg mirrors on InP," IEEE Photon. Technol. Lett., vol. 10, pp. 763-765, 1998.
-
(1998)
IEEE Photon. Technol. Lett.
, vol.10
, pp. 763-765
-
-
Dias, I.F.L.1
Nabet, B.2
Kohl, A.3
Benchimol, J.L.4
Harmand, J.C.5
-
12
-
-
12344305232
-
Type II photoluminescence and conduction band offsets of GaAsSb/InGaAs and GaAsSb/InP heterostructures grown by metalorganic vapor phase epitaxy
-
J. Hu, X. G. Xu, J. A. H. Stotz, S. P. Watkins, A. E. Curzon, M. L. W. Thewalt, N. Matine, and C. R. Bolognesi, "Type II photoluminescence and conduction band offsets of GaAsSb/InGaAs and GaAsSb/InP heterostructures grown by metalorganic vapor phase epitaxy," Appl. Phys. Lett., vol. 73, pp. 2799-2801, 1998.
-
(1998)
Appl. Phys. Lett.
, vol.73
, pp. 2799-2801
-
-
Hu, J.1
Xu, X.G.2
Stotz, J.A.H.3
Watkins, S.P.4
Curzon, A.E.5
Thewalt, M.L.W.6
Matine, N.7
Bolognesi, C.R.8
-
13
-
-
0001051492
-
Negative differential resistance in InGaAs/AlAsSb/InGaAs single-barrier heterostructure
-
W. K. Chen, R. H. Cheng, and J. Ou, "Negative differential resistance in InGaAs/AlAsSb/InGaAs single-barrier heterostructure," Appl. Phys. Lett., vol. 71, pp. 1373-1375, 1997.
-
(1997)
Appl. Phys. Lett.
, vol.71
, pp. 1373-1375
-
-
Chen, W.K.1
Cheng, R.H.2
Ou, J.3
-
14
-
-
0000002368
-
Thermal conductivity and thermalelectric power of N-type indium phosphite at low temperatures
-
S. A. Aliev, A. Y. Nashelskii, and S. S. Shalyt, "Thermal conductivity and thermalelectric power of N-type indium phosphite at low temperatures," Sov. Phys. Solid State, vol. 7, p. 1287, 1965.
-
(1965)
Sov. Phys. Solid State
, vol.7
, pp. 1287
-
-
Aliev, S.A.1
Nashelskii, A.Y.2
Shalyt, S.S.3
-
15
-
-
0347845218
-
First steps toward 1.3-1.55 μm antimonide vertical cavity semiconductor lasers
-
F. Genty, G. Almuneau, L. Chusseau, S. Gaillard, D. Fournier, I. Barbereau, and J. Jacquet, "First steps toward 1.3-1.55 μm antimonide vertical cavity semiconductor lasers," OSA Ann. Meeting Sympos. Advances in Vertical-Cavity Lasers, 1997.
-
(1997)
OSA Ann. Meeting Sympos. Advances in Vertical-Cavity Lasers
-
-
Genty, F.1
Almuneau, G.2
Chusseau, L.3
Gaillard, S.4
Fournier, D.5
Barbereau, I.6
Jacquet, J.7
|