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Volumn 40, Issue 14, 2004, Pages 869-871

2.36 μm diode pumped VCSEL operating at room temperature in continuous wave with circular TEM00 output beam

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; LIGHT MODULATION; MOLECULAR BEAM EPITAXY; PUMPING (LASER); SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DIODES; SEMICONDUCTOR QUANTUM WELLS;

EID: 3142729129     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20045067     Document Type: Article
Times cited : (21)

References (7)
  • 1
    • 0027599474 scopus 로고
    • Near room temperature continuous wave lasing characteristics of GaInAsP/InP surface emitting laser
    • Baba, T., Yogo, Y., Suzuki, K., Koyama, F., and Iga, K.: 'Near room temperature continuous wave lasing characteristics of GaInAsP/InP surface emitting laser', Electron. Lett., 1993, 29, pp. 913-914
    • (1993) Electron. Lett. , vol.29 , pp. 913-914
    • Baba, T.1    Yogo, Y.2    Suzuki, K.3    Koyama, F.4    Iga, K.5
  • 3
    • 0034812993 scopus 로고    scopus 로고
    • Oxygen measurements at high pressures with vertical cavity surface emitting lasers
    • Wang, J., Sanders, S.T., Jeffries, J.B., and Hanson, R.K.: 'Oxygen measurements at high pressures with vertical cavity surface emitting lasers', Appl. Phys. B, 2001, 72, pp. 865-872
    • (2001) Appl. Phys. B , vol.72 , pp. 865-872
    • Wang, J.1    Sanders, S.T.2    Jeffries, J.B.3    Hanson, R.K.4
  • 4
    • 0034204693 scopus 로고    scopus 로고
    • Room temperature GaInAsSb/GaSb quantum well laser for tunable diode laser absorption spectroscopy around 2.35 μm
    • Vicet, A., Nicolas, J.C., Genty, F., Rouillard, Y., Skouri, E.M., Baranov, A.N., and Alibert, C.: 'Room temperature GaInAsSb/GaSb quantum well laser for tunable diode laser absorption spectroscopy around 2.35 μm', IEE Proc., Optoelectron., 2000,147, (3), pp. 172-176
    • (2000) IEE Proc., Optoelectron. , vol.147 , Issue.3 , pp. 172-176
    • Vicet, A.1    Nicolas, J.C.2    Genty, F.3    Rouillard, Y.4    Skouri, E.M.5    Baranov, A.N.6    Alibert, C.7
  • 6
    • 0037421791 scopus 로고    scopus 로고
    • Low threshold, room temperature laser diode pumped Sb-based VECSEL emitting around 2.1 μm
    • Cerutti, L., Garnache, A., Genty, F., Ouvrard, A., and Alibert, C.: 'Low threshold, room temperature laser diode pumped Sb-based VECSEL emitting around 2.1 μm', Electron. Lett., 2003, 39, (3), pp. 290-292
    • (2003) Electron. Lett. , vol.39 , Issue.3 , pp. 290-292
    • Cerutti, L.1    Garnache, A.2    Genty, F.3    Ouvrard, A.4    Alibert, C.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.