Record high characteristic temperature (T0 = 122K) of 1.55μm strain-compensated AlGaInAs/AlGaInAs MQW lasers with AlAs/ AlInAs multiquantum barrier

Electronics Letters

Volumn 35, Issue 1, 1999, Pages 51-52

  Ohnoki, N ^a   Okazaki, G ^a   Koyama, F ^a   Iga, K ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR SUPERLATTICES;

SLOPE EFFICIENCY; STRAIN COMPENSATED QUANTUM WELL LASERS; THRESHOLD CURRENT DENSITY;

QUANTUM WELL LASERS;

EID: 0033530991     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990031     Document Type: Article

References (6)

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2. LIN, C.C., LIU, K.S., WU, M.C., and SHIAO, H.P.: 'Highly uniform characteristics 12-element 1.5μm strain-compensated AlGaInAs/ InP laser arrays with low threshold current and high characteristic temperature', Electron. Lett., 1998, 34, pp. 186-187
3. OHNOKI, N., MUKAIHARA, T., HATORI, N., MIZUTANI, A., KOYAMA, F., and IGA, K.: 'Proposal and demonstration of AlAs-oxide confinement structure for InP-based long wavelength lasers', Jpn. J. Appl. Phys.. 1997, 36, (1), pp. 148-149
4. OHNOKI, N., HATORI, N., MIZUTANI, A., KOYAMA, E., and IGA, K.: 'GaInAs/AlGaInAs semiconductor lasers with AlAs oxide current confinement structure', Jpn. J. Appl. Phys., 1997, 36, (1), pp. 1896-1899
5. OHNOKI, N., OHTAKE, N., KOYAMA, F., and IGA, K.: 'AlAs/AlAs superlattice oxide aperture based on InP substrate for long wavelength VCSELs'. Proc. LEOS'97, 1997, Vol. 2, pp. 423-425
6. IGA, K., UENOHARA, H., and KOYAMA, F.: 'Electron reflectance of multiquantum barrier (MQB)', Electron. Lett., 1986, 22, pp. 1008-1010