Sub-mA Threshold 1.5-μm VCSELs with Epitaxial and Dielectric DBR Mirrors

IEEE Photonics Technology Letters

Volumn 15, Issue 12, 2003, Pages 1677-1679

  Sun, Decai ^a   Fan, Wenjun ^a   Kner, Peter ^a   Boucart, Julien ^a,b   Kageyama, Takeo ^a   Pathak, Rajiv ^a   Zhang, Dongxu ^a   Yuen, Wupen ^a,b  

^a Bandwidth9 Inc   (United States)

^b IEEE   (United States)

Author keywords

InAlGaAs InP; Long wavelength; Thermal resistance; Vertical cavity surface emitting lasers (VCSELs)

Indexed keywords

CONTINUOUS WAVE LASERS; DIELECTRIC DEVICES; EPITAXIAL GROWTH; HEAT RESISTANCE; LOW TEMPERATURE EFFECTS; OPTICAL COMMUNICATION; OPTICAL WAVEGUIDES; OXIDATION; REACTIVE ION ETCHING; REFRACTIVE INDEX; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; TUNNEL JUNCTIONS;

DISTRIBUTED BRAGG REFLECTORS (DBR); FIBER COUPLING;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0346972480     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2003.819711     Document Type: Article

References (13)

1. N. M. Margalit, J. Piprek, S. Zhang, D. I. Babic, K. Streubel, R. P. Mirin, J. R. Wesselmann, J. E. Bowers, and E. L. Hu, "64 °C continuous-wave operation of 1.5-mm vertical-cavity laser," IEEE J. Select. Topics Quantum, Electron., vol. 3, pp. 359-365, Apr. 1997.
2. J. Boucart, C. Starck, F. Gaborit, A. Plais, N. Bouché, E. Derouin, L. Goldstein, C. Fortin, D. Carpentier, P. Salet, F. Brillouet, and J. Jaacquet, "Metamorphic DER and tunnel junction injection, a CW-RT monolithic long-wavelength VCSEL," LEEE J. Select. Topics Quantum. Electron., vol. 5, pp. 520-529, May/June 1999.
3. W. Yuen, G. S. Li, R. F. Nabiev, J. Boucart, P. Kner, R. J. Stone, D. Zhang, M. Beaudoin, T. Zheng, C. He, K. Yu, M. Jansen, D. P. Worland, and C. J. Chang-Hasnain, "High-performance 1.6 mm single-epitaxy-top-emitting-VCSEL," Electron. Lett., vol. 36, pp. 1-2, 2000.
4. J. P. Debray, I. Sagnes, G. Le Roux, P. Legay, M. Quillec, C. Kazmierski, R. Madani, and J. F. Palmier, "MOVPE growth of a monolithic VCSEL at 1.56 mm in the InGaAlAs-InAlAs system lattice-matched to InP," IEEE Photon. Technol. Lett., vol. 11, pp. 770-772, July 1999.
5. J. H. Shin, B. S. Yoo, W. S. Han, O. K. Kwon, Y. G. Ju, and J. H. Lee, "CW operation and threshold characteristics of all monolithic InAlGaAs 1. 55 μm VCSELs grown by MOCVD," IEEE Photon. Technol. Lett., vol. 14, pp. 1031-1033, Aug. 2002.
6. G. Boehm, M. Ortsiefer, R. Shau, F. Koehler, R. Meyer, and M. C. Aman, "AlGalnAs/InP epitaxy for long wavelength vertical cavity surface emitting lasers," J. Cryst. Growth, vol. 227-228, pp. 319-323, 2001.
7. J. Boucart, R. Pathak, M. Beaudoin, P. Kner, D. Sun, D. Zhang, R. J. Stone, R. F. Nabiev, and W. Yuen, "Long wavelength MEMS tunable VCSEL with InP-InAlGaAs bottom DBR," IEEE Photon. Technol. Lett., vol. 15, pp. 1186-1188, Sept. 2003.
8. E. Hall, S. Nakagawa, G. Almuneau, J. K. Kim, and L. A. Coldren, "Room temperature, CW operation of lattice matched long wavelength VCSELs," Electron. Lett., vol. 36, pp. 1465-1467, 2000.
9. M. H. M. Reddy, T. Asano, R. Koda, D. A. Buell, and L. A. Coldren, "Molecular beam epitaxy-grown AlGalnAs/InP distributed Bragg reflectors for 1.55 mm VCSELs," Electron. Lett., vol. 38, no. 20, pp. 1181-1182, Sept. 2002.
10. o of 132 K at room temperature Al(Ga)As/GaAs," Electron. Lett., vol. 34, pp. 1947-1949, 1998.
11. M. Ortsiefer, R. Shau, G. Bohm, F. Kohler, and M.-C. Amann, "Low-threshold index-guided 1.5 mm long-wavelength vertical-cavity surface-emitting laser with high efficiency," Appl. Phys. Lett., vol. 76, no. 16, pp. 2179-2181, Apr. 2000.
12. Y. Ohiso, H. Okamoto, R. Iga, K. Kishi, and C. Amano, "Single transverse mode operation of 1.55 μm buried heterostructure vertical cavity surface emitting lasers," IEEE Photon. Technol. Lett., vol. 14, pp. 738-740, June 2002.
13. P. Kner, T. Kageyama, J. Boucart, R. Stone, D. Sun, R. F. Nabiev, and W. Yuen, "A long-wavelength MEMS tunable VCSEL incorporating a tunnel junction," IEEE Photon. Technol. Lett., vol. 15, pp. 1183-1185, Sept. 2003.