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Volumn 71, Issue 24, 1997, Pages 3483-3485

Midinfrared vertical-cavity surface-emitting laser

Author keywords

[No Author keywords available]

Indexed keywords

MIRRORS; MOLECULAR BEAM EPITAXY; MONOCHROMATORS; PHOTOLUMINESCENCE; Q SWITCHED LASERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0031380328     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120366     Document Type: Article
Times cited : (48)

References (16)
  • 4
    • 85033325484 scopus 로고    scopus 로고
    • private communication
    • Data from an electrically pumped 2.35 μm VCSEL were reported at a European workshop held September 19-21 1997, C. Alibert (private communication).
    • Alibert, C.1
  • 5
    • 0001906523 scopus 로고
    • The very first surface-emitting laser was a mid-IR InSb device with 220 μm cavity thickness [I. Melngailis, Appl. Phys. Lett. 6, 59 (1965)].
    • (1965) Appl. Phys. Lett. , vol.6 , pp. 59
    • Melngailis, I.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.