Molecular beam epitaxial growth of strained AlGaInAs multi-quantum well lasers on InP

Journal of Electronic Materials

Volumn 25, Issue 6, 1996, Pages 948-954

  Mondry, M J ^a   Tarsa, E J ^a   Coldren, L A ^a  

^a University of California   (United States)

Author keywords

AlGaInAs; Interface recombination; Molecular beam epitaxy (MBE); Multi quantum well (MQW) laser

Indexed keywords

CURRENT DENSITY; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INTERMETALLICS; SEMICONDUCTOR QUANTUM WELLS;

ALUMINUM GALLIUM INDIUM ARSENIDE; ELECTRON HOLE OVERLAP; INTERFACE RECOMBINATION; MULTIPLE QUANTUM WELLS; THRESHOLD CURRENT DENSITY;

SEMICONDUCTOR LASERS;

EID: 0030156641     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02666729     Document Type: Article

References (17)

1. P.A. Morton, T. Tanbun-Ek, R.A. Logan, N. Chand, K.W. Wecht, A.M. Sergent and P.F. Sciortino, Jr., Elect Lett. 30, 2044 (1994).
2. I.F. Lealman, M. Bagley, D.M. Cooper, N. Fletcher, M. Harlow, S.D. Perrin, R.H. Walling and L.D. Westbrook, Elect. Lett. 27, 1191 (1991).
3. P.W.A. McIlroy, A. Kurobe and Y. Uematsu, IEEE J. Quant. Elect. QE-21, 1958 (1985).
4. J.S. Osinski, Y. Zou, P. Grodzinski, A. Mathur and P.D. Dapkus, IEEE Phot. Tech. Lett. 4, 10 (1992).
5. J.Z. Wilcox, G.L. Peterson, S.S. Ou, J.J. Yang, M. Jansen and D. Schechter, Appl. Phys. Lett. 53, 2272 (1988).
6. J.W. Matthews and A.E. Blakeslee, J. Cryst Growth 27, 118 (1974).
7. B.I. Miller, U. Koren, M.G. Young and M.D. Chien, Appl. Phys. Lett. 58, 1952 (1991).
8. H. Kunzel, J. Bottcher, A. Hase and C. Schramm, Materials Science and Engineering B-Solid State Materials For Advanced Technology 21, 194 (1993).
9. V. Swaminathan and A.T. Macrander, Materials Aspects of GaAs and InP Based Structures, Prentice Hall Advanced Reference Series (Englewood Cliffs, NJ: Prentice Hall, 1991).
10. A.S. Brown, J.A. Henige and M.J. Delaney,Appl. Phys. Lett . 52, 1142 (1988).
11. W.-Y. Choi and C.G. Fonstad, J. Cryst. Growth 127, 555 (1993).
12. J.P. Loehr and J. Singh, IEEE J. Quant. Elect. 27, 708 (1991).
13. G. Duggan, H.I. Ralph and R.J. Elliott, Solid State Comm. 56, 17 (1985).
14. C. Schramm, H.G. Bach, H. Kunzel and J.P. Praseuth, J. Electrochem. Soc. 138, 2808 (1991).
15. D. Biswas, A. Chin, J. Pamulapati and P. Bhattacharya, J. Appl. Phys. 67, 2450 (1990).
16. C.E. Zah, R. Bhat, F.J. Favire, Jr., S.G. Menocal, N.C. Andreadakis, K.W. Cheung, D.M.D. Hwang, M.A. Koza and T.P. Lee, IEEE J. Quant. Elect. 27, 1440 (1991).
17. (Note added in proof, a recent demonstration of a high speed laser in this material system) H. Hillmer, R. Losch, F. Steinhagen, W. Schlapp, A. Pocker and H. Burkhard, Elect. Lett. 31, 1346 (1995).