High-performance oxide-confined GaAs VCSEL's

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 3, Issue 2, 1997, Pages 409-414

  Weigl, Bernhard ^a   Grabherr, Martin ^a   Jung, Christian ^a,c   Jäger, Roland ^a   Reiner, Gernot ^a   Michalzik, Rainer ^a   Sowada, Dirk ^a   Ebeling, Karl Joachim ^a,b  

^a UNIVERSITY OF ULM   (Germany)

^b IEEE

^c German Physical Society   (Germany)

Author keywords

High efficiency; MBE growth; Semiconductor laser; Temperature range; Vertical cavity laser

Indexed keywords

CARBON; LASER MODES; LIGHT POLARIZATION; MOLECULAR BEAM EPITAXY; OPTICAL WAVEGUIDES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0031109321     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.605686     Document Type: Article

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