MOVPE growth of a monolithic VCSEL at 1.56 μm in the InGaAlAs-InAlAs system lattice matched to InP

IEEE Photonics Technology Letters

Volumn 11, Issue 7, 1999, Pages 770-772

  Debray, J P ^a,b   Sagnes, I ^a   Le Roux, G ^a   Legay, P ^a   Quillec, M ^a   Kazmierski, C ^c   Madani, R ^c   Palmier, J F ^c  

^a ORANGE LABS   (France)

^b EMCORE CORPORATION   (United States)

^c OPTO+   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; CURRENT DENSITY; METALLORGANIC VAPOR PHASE EPITAXY; MIRRORS; REFRACTIVE INDEX; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON;

DISTRIBUTED BRAGG REFLECTOR; LOW PRESSURE METALLORGANIC VAPOR PHASE EPITAXY; VERTICAL CAVITY SURFACE EMITTING LASER;

SEMICONDUCTOR LASERS;

EID: 0032637076     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.769702     Document Type: Article

References (12)

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