High temperature GaInSbAs/GaAlSbAs quantum well singlemode continuous wave lasers emitting near 2.3μm

Electronics Letters

Volumn 36, Issue 6, 2000, Pages 537-539

  Yarekha, D A ^c   Glastre, G ^a   Perona, A ^c   Rouillard, Y ^c   Genty, F ^c   Skouri, E M ^b   Boissier, G ^c   Grech, P ^c   Joullie, A ^c   Alibert, C ^c   Baranov, A N ^c  

^a Laboratoire Central de Recherche   (France)

^b IBN ZOHR UNIVERSITY   (Morocco)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; CONTINUOUS WAVE LASERS; ELECTRIC CURRENTS; HIGH TEMPERATURE OPERATIONS; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

SINGLE LONGITUDINAL MODE EMISSION; THRESHOLD CURRENT; TUNABLE DIODE LASER ABSORPTION SPECTROSCOPY;

QUANTUM WELL LASERS;

EID: 0033877517     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20000416     Document Type: Article

References (4)

1. CHOI, H.K., EGLASH, S.J., and CONNORS, M.K.: 'Single-frequency GalnAsSb/A1GaAsSb quantum-well ridge-waveguide lasers emitting at 2.1μm', Appl. Phys. Lett., 1993, 63, pp. 3271-3272
2. JOULLIE, A., GLASTRE, G., BLONDEAU, R., NICOLAS, J.-C., CUMINAL, Y., BARANOV, A.N., WILK, A., GARCIA, M., GRECH, P., and ALIBERT, C.: 'Continuous-wave operation of GaInAsSb-GaSb type-II quantum-well ridge-lasers', IEEE J. Sel. Topics Quantum Electron, 1999, 3, pp. 711-714
3. YAREKHA, D.A., VICET, A., PERONA, A., GLASTRE, G., ROUILLARD, Y., SKOURI, E.M., BOISSIER, G., GRECH, P., JOULLIÉ, A., ALIBERT, C., and BARANOV, A.N.: 'High efficiency GaInSbAs/GaSb type-II quantum well continuous wave lasers', submitted to Semicond. Sci. Technol., 1999
4. GARBUZOV, D., MENNA, R., MAIOROV, M., LEE, H., KHALFIN, V., DIMARCO, L., CAPEWELL, D., MARTINELLI, R., BELENKY, G., and CONNOLY, J.: '2.3-2.7μm room temperature cw-operation of InGaAsSb/AlGaAsSb broad-contact and single-mode ridgewaveguide SCH-QW diode lasers'. Proc. SPIE, 1999, Vol. 3628, pp. 124-129