1-m W CW-RT monolithic VCSEL at 1.55 μm

IEEE Photonics Technology Letters

Volumn 11, Issue 6, 1999, Pages 629-631

  Boucart, J ^a   Starck, C ^a   Gaborit, F ^a   Plais, A ^a   Bouche N ^a   Derouin, E ^a   Goldstein, L ^a   Fortin, C ^a   Carpentier, D ^a   Salet, P ^a   Brillouet, F ^a   Jacquet, J ^a  

^a OPTO+   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; MIRRORS; MOLECULAR BEAM EPITAXY; MONOLITHIC INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SUBSTRATES; TUNNEL JUNCTIONS;

BRAGG MIRROR; CURRENT INJECTION; VERTICAL CAVITY SURFACE EMITTING LASER;

SEMICONDUCTOR LASERS;

EID: 0032684040     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.766766     Document Type: Article

References (13)

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