Sb-based monolithic VCSEL operating near 2.2μm at room temperature

Electronics Letters

Volumn 34, Issue 3, 1998, Pages 281-282

  Baranov, A N ^a   Rouillard, Y ^a   Boissier, G ^a   Grech, P ^a   Gaillard, S ^a   Alibert, C ^a  

^a UNIVERSITÉ MONTPELLIER II   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; LASER PULSES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ANTIMONY; SEMICONDUCTOR GROWTH;

THRESHOLD CURRENT DENSITY; VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0032484829     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980142     Document Type: Article

References (8)

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3. IGA, K.: 'New materials and process technologies for vertical cavity surface emitting lasers'. 1997 Dig. IEEE/LEOS Summer Topical Meetings: Vertical Cavity Lasers, 11-15 August 1997, Montréal, pp. 3-4 (IEEE Catalog Number: 97TH6276)
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