Optimisation of λ = 850 nm hybrid-mirror verticalcavity surface-emitting laser with 37 μA threshold current

IEE Proceedings: Optoelectronics

Volumn 147, Issue 1, 2000, Pages 56-60

  Langenfelder, T ^a   Grothe, H ^a  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

MIRRORS; OPTIMIZATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SILICA; SILICON NITRIDE;

GALLIUM ALUMINUM ARSENIDE; VERTICAL-CAVITY SURFACE-EMITTING LASER (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0033872867     PISSN: 13502433     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1049/ip-opt:20000318     Document Type: Article

References (13)

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