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Volumn , Issue , 2003, Pages 259-260
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Room temperature CW operation at 1.55 μm of a monolithic InP-based optically-pumped vertical-external-cavity surface-emitting lasers grown by MOCVD
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Author keywords
[No Author keywords available]
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Indexed keywords
CONTINUOUS WAVE LASERS;
DIFFRACTION GRATINGS;
HIGH POWER LASERS;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
OPTICAL PUMPING;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM PHOSPHIDE;
SEMICONDUCTOR GROWTH;
TEMPERATURE;
ULTRASHORT PULSES;
INDIUM;
INDIUM PHOSPHIDE;
LASER EXCITATION;
MERGERS AND ACQUISITIONS;
OPTICALLY PUMPED LASERS;
PUMPING (LASER);
SEMICONDUCTOR LASERS;
SURFACE WAVES;
MONOLITHIC CONTINUOUS WAVE OPERATION;
VERTICAL EXTERNAL CAVITY SURFACE EMITTING LASERS;
SEMICONDUCTOR LASERS;
SURFACE EMITTING LASERS;
CONTINUOUS-WAVE OPERATIONS;
DIFFRACTION LIMITED;
EDGE EMITTING DIODE LASERS;
INP-BASED STRUCTURE;
OPTICAL SURFACE WAVES;
POWER LASERS;
PUMP LASER;
VERTICAL EXTERNAL CAVITY SURFACE EMITTING LASER;
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EID: 0037810857
PISSN: 10928669
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (5)
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References (3)
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