Interfacial layer formation in Gd2O3 films deposited directly on Si(0 0 1)

Applied Surface Science

Volumn 173, Issue 3-4, 2001, Pages 318-326

  Gupta, J A ^a   Landheer, D ^a   Sproule, G I ^a   McCaffrey, J P ^a   Graham, M J ^a   Yang, K C ^b   Lu, Z H ^b   Lennard, W N ^c  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b UNIVERSITY OF TORONTO   (Canada)

^c UNIVERSITY OF WESTERN ONTARIO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ELECTRON BEAMS; EVAPORATION; GADOLINIUM COMPOUNDS; INTERFACES (MATERIALS); RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON; STOICHIOMETRY; SUBSTRATES; TARGETS; X RAY PHOTOELECTRON SPECTROSCOPY;

GADOLIUM TRIOXIDE;

SURFACE CHEMISTRY;

EID: 0034825393     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00014-9     Document Type: Article

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