Characterization of oxide films on 4H-SiC epitaxial (0001) faces by high-energy-resolution photoemission spectroscopy: Comparison between wet and dry oxidation

Journal of Applied Physics

Volumn 100, Issue 5, 2006, Pages

  Hijikata, Yasuto ^a   Yaguchi, Hiroyuki ^a   Yoshida, Sadafumi ^a   Takata, Yasutaka ^b   Kobayashi, Keisuke ^c   Nohira, Hiroshi ^d   Hattori, Takeo ^d  

^a SAITAMA UNIVERSITY   (Japan)

^b RIKEN SPring 8 Center   (Japan)

^c JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE   (Japan)

^d TOKYO CITY UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; INTERFACES (MATERIALS); MOS DEVICES; OXIDATION; PHOTOEMISSION; SILICON CARBIDE;

INTERFACE STATE DENSITY; OXIDE FILMS; PHOTOEMISSION SPECTROSCOPY; WET OXIDATION;

THIN FILMS;

EID: 33748914131     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2345471     Document Type: Article

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