Epitaxial growth of high-quality 4H-SiC carbon-face by low-pressure hot-wall chemical vapor deposition

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 6 B, 2003, Pages

  Kojima, Kazutoshi ^a,b   Suzuki, Takaya ^a   Kuroda, Satoshi ^b   Nishio, Johji ^a   Arai, Kazuo ^b  

^a R and D Assoc Fut Electron Devices   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

4H SiC; Carbon face; Doping; Epitaxial growth; Morphology; Site competition

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL IMPURITIES; MORPHOLOGY; PRESSURE EFFECTS; SEMICONDUCTOR DOPING; SILICON CARBIDE;

SITE COMPETITION;

EPITAXIAL GROWTH;

EID: 0042383455     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.l637     Document Type: Article

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