Measurements of the depth profile of the refractive indices in oxide films on SiC by spectroscopic ellipsometry

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 2 A, 2002, Pages 800-804

  Iida, Takeshi ^a   Tomioka, Yuichi ^a   Yoshimoto, Kazuo ^b   Midorikawa, Masahiko ^c   Tukada, Hiroyuki ^a   Orihara, Misao ^b   Hijikata, Yasuto ^c   Yaguchi, Hiroyuki ^d   Yoshikawa, Masahito ^b   Itoh, Hisayoshi ^c   Ishida, Yuuki ^a   Yoshida, Sadafumi ^b  

^a SAITAMA UNIVERSITY   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^d NEC CORPORATION   (Japan)

Author keywords

6H SiC; Oxide films; Refractive indices; SiC SiO2 interface; Spectroscopic ellipsometry

Indexed keywords

ELLIPSOMETRY; ETCHING; INTERFACES (MATERIALS); OXIDATION; REFRACTIVE INDEX; SILICON CARBIDE; SPECTROSCOPIC ANALYSIS;

OXIDE FILMS;

THIN FILMS;

EID: 0036478462     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.800     Document Type: Article

References (16)