Photoemission spectroscopic studies on oxide/SiC interfaces formed by dry and pyrogenic oxidation

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 1341-1344

  Hijikata, Y ^a   Yaguchi, H ^a   Ishida, Y ^b   Yoshikawa, M ^c   Kamiya, T ^c   Yoshida, S ^a  

^a SAITAMA UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c Japan Atom Res Institute Takasaki   (Japan)

Author keywords

Ar post oxidation annealing; Band lineup; Bonding; Capacitance to voltage measurement; Oxide SiC interface; Photoelectron spectroscopy; Pyrogenic oxidation

Indexed keywords

ANNEALING; BONDING; CAPACITANCE; ELECTRIC PROPERTIES; ELLIPSOMETRY; OXIDATION; PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSION;

AR POST-OXIDATION ANNEALING; BAND LINEUP; CAPACITANCE TO VOLTAGE MEASUREMENTS; OXIDE/SIC INTERFACE; PYROGENIC OXIDATION;

SILICON CARBIDE;

EID: 8744311763     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.1341     Document Type: Conference Paper

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