Characterization of oxide films on SiC by spectroscopic ellipsometry

Japanese journal of applied physics

Volumn 39, Issue 10 B, 2000, Pages

  Iida, Takeshi ^a   Tomioka, Yuichi ^a   Hijikata, Yasuto ^a   Yaguchi, Hiroyuki ^a   Yoshikawa, Masahito ^b   Ishida, Yuuki ^c   Okumura, Hajime ^c   Yoshida, Sadafumi ^a  

^a SAITAMA UNIVERSITY   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

^c ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELLIPSOMETRY; INTERFACES (MATERIALS); OPTICAL FILMS; OXIDES; REFRACTIVE INDEX; SILICA; STRUCTURE (COMPOSITION); THERMOOXIDATION;

DRY OXIDATION; OXIDE FILMS; PYROGENIC OXIDATION; SPECTROSCOPIC ELLIPSOMETRY;

SILICON CARBIDE;

EID: 0034290668     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.l1054     Document Type: Article

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