2-inch 4H-SiC homoepitaxial layer grown on on-axis C-face substrate by CVD method

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 93-96

  Kojima, K ^a   Okumura, H ^a   Kuroda, S ^a   Arai, K ^a   Ohi, A ^a   Akinaga, H ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

4H SiC; Carbon face; Dislocation; Homoepitaxiy; Micropipe; Morphology; On axis

Indexed keywords

CARBON; CHEMICAL VAPOR DEPOSITION; SILICON CARBIDE; SURFACE MORPHOLOGY;

CARBON FACE SUBSTRATES; EPITAXIAL WAFERS; HOMOEPITAXIAL LAYER GROWN; SPIRAL GROWTH;

EPITAXIAL GROWTH;

EID: 33747136084     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.93     Document Type: Conference Paper

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