Characterization of oxide films on SiC epitaxial (000-1) faces by angle-resolved photoemission spectroscopy measurements using synchrotron radiation

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 585-588

  Hijikata, Y ^a   Yaguchi, H ^a   Yoshida, S ^a   Takata, Y ^b   Kobayashi, K ^c   Shin, S ^b,d   Nohira, H ^e   Hattori, T ^e  

^a SAITAMA UNIVERSITY   (Japan)

^b RIKEN   (Japan)

^c JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

^e TOKYO CITY UNIVERSITY   (Japan)

Author keywords

(000 1) face; Bonding; Dry oxidation; Oxide SiC interface; Photoelectron spectroscopy; Wet oxidation

Indexed keywords

BINDING ENERGY; MOS DEVICES; PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSION;

DRY OXIDATION; WET OXIDATION;

EPITAXIAL FILMS;

EID: 33748898380     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.585     Document Type: Conference Paper

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