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Volumn 529, Issue 3, 2003, Pages 515-526
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Properties of the SiO2/SiC interface investigated by angle resolved studies of the Si 2p and Si 1s levels and the Si KLL Auger transitions
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Author keywords
Angle resolved photoemission; Auger electron spectroscopy; Oxidation; Silicon; Silicon carbide; Silicon oxides
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Indexed keywords
AUGER ELECTRON SPECTROSCOPY;
INTERFACES (MATERIALS);
OXIDATION;
PHASE TRANSITIONS;
SILICA;
SILICON CARBIDE;
ANGLE RESOLVED PHOTOEMISSION;
SURFACE CHEMISTRY;
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EID: 0037430958
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/S0039-6028(03)00337-6 Document Type: Article |
Times cited : (41)
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References (30)
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