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Volumn 529, Issue 3, 2003, Pages 515-526

Properties of the SiO2/SiC interface investigated by angle resolved studies of the Si 2p and Si 1s levels and the Si KLL Auger transitions

Author keywords

Angle resolved photoemission; Auger electron spectroscopy; Oxidation; Silicon; Silicon carbide; Silicon oxides

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; INTERFACES (MATERIALS); OXIDATION; PHASE TRANSITIONS; SILICA; SILICON CARBIDE;

EID: 0037430958     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(03)00337-6     Document Type: Article
Times cited : (41)

References (30)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.