Study on electron trapping and interface states of various gate dielectric materials in 4H-SiC metal-oxide-semiconductor capacitors

Applied Physics Letters

Volumn 77, Issue 13, 2000, Pages 2054-2056

  Cho, Won Ju ^a   Kosugi, Ryoji ^a   Senzaki, Junji ^a   Fukuda, Kenji ^a   Arai, Kazuo ^a   Suzuki, Seiji ^b  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b Ultra Low Loss Pwr Device TRB   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000290582     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1312862     Document Type: Article

References (15)

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