Determination of electron escape depth in ultrathin silicon oxide

Applied Physics Letters

Volumn 86, Issue 8, 2005, Pages 1-3

  Nohira, H ^a   Okamoto, H ^a   Azuma, K ^b   Nakata, Y ^b   Ikenaga, E ^c   Kobayashi, K ^c   Takata, Y ^c   Shin, S ^c   Hattori, T ^a  

^a TOKYO CITY UNIVERSITY   (Japan)

^b Advanced LCD Technologies Development Center Co Ltd   (Japan)

^c JASRISPring 8 ^*  (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

LOW TEMPERATURE EFFECTS; OXYGEN; PHOTOELECTRON SPECTROSCOPY; PHOTONS; SILICON; SYNCHROTRON RADIATION;

ELECTRON ESCAPE DEPTH; OXIDE LAYERS; PHOTON ENERGY; ULTRATHIN SILICON OXIDE;

SILICA;

EID: 17044377171     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1868066     Document Type: Article

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