Quantum mechanical calculation of hole mobility in silicon inversion layers under arbitrary stress

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 147-150

  Wang, E ^a   Matagne, P ^a   Shifren, L ^a   Obradovic, B ^a   Kotlyar, R ^a   Cea, S ^a   He, J ^a   Ma, Z ^a   Nagisetty, R ^a   Tyagi, S ^a   Stettler, M ^a   Giles, M D ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; BAND STRUCTURE; COMPUTER SIMULATION; ELECTRIC RESISTANCE; HOLE MOBILITY; SEMICONDUCTING SILICON; STRESSES; QUANTUM CHEMISTRY; QUANTUM THEORY; SILICON;

BAND ANISOTROPY; NONLINEAR INTERACTIONS; PHONON DISPERSION; QUANTUM ANISOTROPIC TRANSPORT MODELS;

QUANTUM THEORY; ANISOTROPY;

BIAXIAL STRESS; DEPENDENT SCATTERINGS; MOMENTUM-DEPENDENT; QUANTUM ANISOTROPIC TRANSPORT MODELS; QUANTUM GAS; QUANTUM-MECHANICAL CALCULATION; SCATTERING MODEL; SILICON INVERSION LAYERS; STRESS-DEPENDENT; UNIAXIAL STRESS;

EID: 21644476193     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. T. Ghani et al., "A 90nm high volume manufacturing logic technology featuring novel 45nm gate length strained silicon CMOS transistors", IEDM Technical Digest, p.978 (2003).
2. M. D. Giles et al., "Understanding stress enhanced performance in Intel 90nm technology", 2004 Symposium on VLSI Technology, p. 118.
3. M. Fischetti, Z. Ren, P. Solomon, M. Yang and K. Rim", Six-band k.p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain and silicon thickness", J. Appl. Phys. 94 (2), p 1079 (2003).
4. T. Okada et al., "Rigorous mathematical calculations of p- and n-mobility as functions of mechanical stress, electric field, current direction and substrate indices for scaled CMOS designing", 2004 Symposium on VLSI Technology, p. 116.
5. Calvin Yi-Ping Chao and Shun Lien Chuang, "Spin-orbit-coupling effects on the valence-band structure of strained semiconductor quantum wells", Phy. Rev. B, 46 (7), p.4110, (1992).
6. S. Takagi, A. Toriumi, M. Iwase and H. Tango, "On the universality of inversion layer mobility in si MOSFETs: Part I-Effects of substrate impurity concentration", IEEE Trans. Elec. Dev. Vol. 41, No. 12, p. 2357, (1994).
7. M. V. Fischetti and S. E. Laux, "Band structure, deformation potentials, and carrier mobility in strained Si, Ge and SiGe alloys", J. Appl. Phys. Vol. 80, No. 4, P. 2234, (1996)