100 nm gate length high performance/low power CMOS transistor structure

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 415-418

  Ghani, T ^a   Ahmed, S ^a   Aminzadeh, P ^a   Bielefeld, J ^a   Charvat, P ^a   Chu, C ^a   Harper, M ^a   Jacob, P ^a   Jan, C ^a   Kavalieros, J ^a   Kenyon, C ^a   Nagisetty, R ^a   Packan, P ^a   Sebastian, J ^a   Taylor, M ^a   et al , ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POWER SUPPLIES TO APPARATUS; GATES (TRANSISTOR); SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

DRIVE CURRENT; SOURCE DRAIN EXTENSION IMPLANT;

MOSFET DEVICES;

EID: 17344376740     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)