Low defect ultra-thin fully strained-Ge MOSFET on relaxed Si with high mobility and low Band-To-Band-Tunneling (BTBT)

Digest of Technical Papers - Symposium on VLSI Technology

Volumn 2005, Issue , 2005, Pages 82-83

  Krishnamohan, Tejas ^a   Krivokapic, Zoran ^b   Uchida, Ken ^a,c   Nishi, Yoshio ^a   Saraswat, Krishna C ^a  

^a Stanford University   (United States)

^b ADVANCED MICRO DEVICES   (United States)

^c TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND-TO-BAND-TUNNELING (BTBT) LEAKAGE; SIGE DEVICES; SURFACE CHANNEL;

COMPUTER SIMULATION; DEFECTS; ENERGY GAP; LEAKAGE CURRENTS;

MOSFET DEVICES;

EID: 33745138556     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2005.1469221     Document Type: Conference Paper

References (6)

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4. A. Ritenour et al, IEDM 2003, pp. 433
5. G. Hock et al, Appl. Phys. Lett. 76, 3920 (2000)
6. T. Irisawa et al, Appl. Phys. Lett., 81, 847 (2002)