Fabrication of strained Si/strained SiGe/strained Si heterostructures on insulator by a bond and etch-back technique

Proceedings - IEEE International SOI Conference

Volumn , Issue , 2004, Pages 35-36

  Aberg I ^a   Olubuyide, O O ^a   Li, J ^b   Hull, R ^b   Hoyt, J L ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b University of Virginia   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROSTRUCTURE ON INSULATOR (HOI); LAYER TRANSFER METHOD; THERMAL BUDGET; THERMAL PROCESSING;

ANNEALING; CHEMICAL MECHANICAL POLISHING; DIFFUSION; ELECTRIC INSULATORS; ELLIPSOMETRY; ETCHING; MOSFET DEVICES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; SURFACE ROUGHNESS; THERMOANALYSIS;

HETEROJUNCTIONS;

EID: 16244387311     PISSN: 1078621X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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