Method of observation of low density interface states by means of X-ray photoelectron spectroscopy under bias and passivation by cyanide ions

Applied Surface Science

Volumn 252, Issue 21, 2006, Pages 7700-7712

  Kobayashi, H ^a   Sakurai, T ^a   Yamashita, Y ^a   Kubota, T ^a   Maida, O ^a   Takahashi, M ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Cyanide ion; Defect passivation; Interface states; Si; Ultrathin silicon oxide; XPS bias

Indexed keywords

CYANIDES; INTERFACES (MATERIALS); PASSIVATION; SOLAR CELLS; ULTRATHIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

CYANIDE ION; DEFECT PASSIVATION; INTERFACE STATES; ULTRATHIN SILICON OXIDE;

MOS DEVICES;

EID: 33747167944     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.03.055     Document Type: Article

References (80)

1. White M.H., and Cricchi R. IEEE Trans. Electron Dev. ED-19 (1972) 1280
2. Temple V., and Shwechun J. Solid-State Electron. 16 (1973) 93
3. Kobayashi H., Kogetsu Y., Ishida T., and Nakato Y. J. Appl. Phys. 74 (1993) 4756
4. Kobayashi H., Asano A., Asada S., Kubota T., Yamashita Y., Yoneda K., and Todokoro Y. J. Appl. Phys. 83 (1998) 2098
5. Kobayashi H., Kogetsu Y., and Nakato Y. Surf. Sci. 306 (1994) 69
6. Nicollian E.H., and Brews J.R. MOS (Metal Oxide Semiconductor) Physics and Technology (1982), Wiley, New York
7. Lam Y.W. J. Phys. D 4 (1971) 1370
8. Kuhn M. Solid-State Electron. 13 (1970) 873
9. Schulz M. Nature 399 (1999) 729
10. Berglund C.N. IEEE Trans. Electron Dev. ED-13 (1966) 701
11. Terman L.M. Solid-State Electron. 5 (1962) 285
12. Eaton D.H., and Sah C.T. Phys. Status Solidi A 12 (1972) 95
13. Nicollian E.H., and Goetzberger A. Bell Syst. Tech. J. 46 (1967)
14. Brar B., Wilk G.D., and Seabaugh A.C. Appl. Phys. Lett. 69 (1996) 2728
15. Momose H.S., Ono M., Yoshitomi Y., Ohguro T., Nakamura S., Saito M., and Iwai H. IEEE Trans. Electron Dev. 43 (1996) 1233
16. Lo S.-H., Buchanan D.A., Taur Y., and Wang W. IEEE Electron Dev. Lett. 18 (1997) 209
17. Rowe J.E., Christman S.B., and Ibach H. Phys. Rev. Lett. 34 (1975) 874
18. Goldmann A., Koke P., Mönch W., Wolfgarten G., and Pollmann J. Surf. Sci. 169 (1980) 438
19. Himpsel F.J., Heimann P., and Eastman D.E. Phys. Rev. B 24 (1981) 2003
20. Lau W.M., and Wu X.-W. Surf. Sci. 245 (1991) 345
21. Kobayashi H., Namba K., Mori T., and Nakato Y. Phys. Rev. B 52 (1995) 5781-5788
22. Yamashita Y., Namba K., Nakato Y., Nishioka Y., and Kobayashi H. J. Appl. Phys. 79 9 (1996) 7051-7057
23. Kobayashi H., Yamashita Y., Nakato Y., Komeda T., and Nishioka Y. Appl. Phys. Lett. 69 (1996) 2276
24. Kubota T., Asano A., Nishioka Y., and Kobayashi H. J. Chem. Phys. 111 (1999) 8136
25. Asano A., Kubota T., Nishioka Y., and Kobayashi H. Surf. Sci. 427/428 (1999) 219
26. Yamashita Y., Asano A., Nishioka Y., and Kobayashi H. Phys. Rev. B 59 (1999) 15872
27. Sakoda T., Matsumura M., and Nishioka Y. Appl. Surf. Sci. 117/118 (1997) 241
28. Ducroquet F., Ernst T., Weber O., Hartmann J.-M., Loup V., Besson P., Brévard L., Di Maria J.L., and Deleonibus S. Appl. Surf. Sci. 224 (2004) 274
29. Celik-Butler Z., and Vasina P. Solid-State Electron. 43 (1999) 1695
30. Surya C., Wang W., and Lai P.T. Semicond. Sci. Technol. 13 (1998) 792
31. Trapes C., Goguencheim D., and Bravaix A. J. Non-Cryst. Solids 322 (2003) 199
32. Freeman L.B., and Dahlke W.E. Solid-State Electron. 13 (1970) 1483
33. Kar S. Solid-State Electron. 18 (1975) 723
34. Yeow Y.T., Lamb D.R., and Brotherton S.D. J. Phys. D 8 (1975) 1495
35. Reed M.L., and Plummer J.D. J. Appl. Phys. 63 (1988) 5776
36. Hickmott T.W. J. Appl. Phys. 48 (1977) 723
37. Myer S.M. J. Appl. Phys. 61 (1987) 5428
38. J.A. Kerr, D.W. Stocker, Handbook of Chemistry and Physics, 83rd ed., ed. by D. R. Lide, CRC Press, Boca Raton, 2002, pp. 9-52.
39. Cheng K., Lee J., and Lyding J.W. Appl. Phys. Lett. 77 (2000) 3388
40. Caplan P.J., Poindexter E.H., Deal B.E., and Razouk R.R. J. Appl. Phys. 50 (1979) 5847
41. McLean F.B. IEEE Trans. Nucl. Sci. NS-27 (1980) 1651
42. 2 and its Interfaces (1978), Pergamon, New York
43. McLean F.B. IEEE Trans. Nucl. Sci. NS-27 (1980) 1651
44. Kobayashi H., Tachibana S., Yamanaka K., Nakato Y., and Yoneda K. J. Appl. Phys. 81 (1997) 7630
45. Kobayashi H., Asano A., Asada S., Kubota T., Yamashita Y., Yoneda K., and Todokoro Y. J. Appl. Phys. 83 (1998) 2098
46. Kobayashi H., Asano A., Takahashi M., Yoneda K., and Todokoro Y. Appl. Phys. Lett. 77 (2000) 4392
47. Asano A., Asuha, Maida O., Todokoro Y., and Kobayashi H. Appl. Phys. Lett. 80 (2002) 4552
48. Maida O., Asano A., Takahashi M., Iwasa H., and Kobayashi H. Surf. Sci. 542 (2003) 244
49. Flitsch R., and Raider S.I. J. Vac. Sci. Technol. 12 (1975) 305
50. Himpsel F.J., McFeely F.R., Taleb-Ibrahimi A., Yarmoff J.A., and Hollinger G. Phys. Rev. B 38 (1988) 6084
51. Kern W., and Puotinen D.A. RCA Rev. 31 (1970) 187
52. Kobayashi H., Tachibana S., Yamanaka K., Nakato Y., and Yoneda K. J. Appl. Phys. 81 (1997) 7630
53. Kobayashi H., Tachibana S., Nakato Y., and Yoneda K. J. Electrochem. Soc. 144 (1997) 2893
54. Kanazaki E., Yoneda K., Todokoro Y., Nishitani M., and Kobayashi H. Solid State Commun. 113 (2000) 195
55. Kubota T., Ivanco J., Takahashi M., Yoneda K., Todokoro Y., and Kobayashi H. Surf. Sci. 529 (2003) 329
56. Kobayashi H., Asano A., Takahashi M., Yoneda K., and Todokoro Y. Appl. Phys. Lett. 77 (2000) 4392
57. Asano A., Asuha, Maida O., Todokoro Y., and Kobayashi H. Appl. Phys. Lett. 80 (2002) 4552
58. Kobayashi H., Namba K., Yamashita Y., Nakato Y., Komeda T., and Nishioka Y. J. Appl. Phys. 80 (1996) 1578
59. Delley B. J. Chem. Phys. 94 (1991) 7245
60. Devine R.A.B. Appl. Phys. Lett. 68 (1996) 3108
61. Queeney K.T., Weldon M.K., Chang J.P., Chabal Y.J., Gurevich A.B., Sapjeta J., and Opila R.L. J. Appl. Phys. 87 (2000) 1322
62. Ishikawa K., Ogawa H., and Fujimura S. J. Appl. Phys. 85 (1999) 4076
63. Olsen J.E., and Shimura F. Appl. Phys. Lett. 53 (1988) 1934
64. Boyd I.W., and Wilson J.I.B. J. Appl. Phys. 62 (1987) 3195
65. Lehman A., Schuman L., and Hübner K. Phys. Status Solidi B 117 (1983) 689
66. Devine R.A.B. Appl. Phys. Lett. 68 (1996) 3108
67. Martinet C., and Devine R.A.B. J. Appl. Phys. 77 (1995) 4343
68. Sugita Y., Watanabe S., and Awaji N. Jpn. J. Appl. Phys. Part 1 35 (1996) 5437
69. Martinet C., and Devine R.A.B. J. Appl. Phys. 77 (1995) 4343
70. Higashi G.S., Becker R.S., Chabal Y.J., and Becker A.J. Appl. Phys. Lett. 58 (1991) 1656
71. Kobayashi H., Yamashita Y., Mori T., Nakato Y., Park K.H., and Nishioka Y. Surf. Sci. 326 (1995) 124
72. Kobayashi H., Asuha, Maida O., Takahashi M., and Iwasa H. J. Appl. Phys. 94 (2003) 7328
73. Asuha, Imai S., Takahashi M., and Kobayashi H. Appl. Phys. Lett. 85 (2004) 3783
74. Sah C.T., Noyce R.N., and Shockley W. Proc. IRE 45 (1957) 1228
75. Kobayashi H., Ishida T., Nakato Y., and Tsubomura H. J. Appl. Phys. 69 (1991) 1736
76. Ishida T., Kouno H., Kobayashi H., and Nakato Y. J. Electrochem. Soc. 141 (1994) 1357
77. Card H.C. Solid-State Electron. 20 (1977) 971
78. Kobayashi H., Kogetsu Y., Ishida T., and Nakato Y. J. Appl. Phys. 74 (1993) 4756
79. White M.H., Cricchi J.R., and Trans I.E.E.E. Electron Dev. ED-19 (1972) 1280
80. Tsubomura H., and Kobayashi H. Crit. Rev. Solid State Mater. Sci. 18 (1993) 261