Electrical properties of Si 1-y C y /Si/SiO 2 interface for sub 50 nm strained-channel nMOSFETs

Applied Surface Science

Volumn 224, Issue 1-4, 2004, Pages 274-277

  Ducroquet, F ^a,b   Ernst, T ^a   Weber, O ^a,b   Hartmann, J M ^a   Loup, V ^a   Besson, P ^c   Brevard L ^a   Di Maria, J L ^a   Deleonibus, S ^a  

^a CEA LETI   (France)

^b INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^c STMICROELECTRONICS   (France)

Author keywords

Interface state density; Mobility; MOSFET; Si 1 y C y alloys

Indexed keywords

CARBON; CHEMICAL VAPOR DEPOSITION; ELECTRIC PROPERTIES; ELECTRONS; INTERFACES (MATERIALS); SILICON ALLOYS;

INTERFACE STATE DENSITY; MOBILITY; SI1-YCY ALLOYS;

MOSFET DEVICES;

EID: 1142304522     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2003.08.095     Document Type: Conference Paper

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