Channel length scaling of 1/f noise in 0.18 μm technology MDD n-MOSFETs

Solid-State Electronics

Volumn 43, Issue 9, 1999, Pages 1695-1701

  Çelik Butler, Zeynep ^a   Vasina, Petr ^a  

^a Southern Methodist University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRAPS; ELECTRONIC DENSITY OF STATES; INTERFACES (MATERIALS); MICROELECTRONICS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SPURIOUS SIGNAL NOISE;

MEDIUM DOPED DRAIN (MDD) TECHNOLOGY;

MOSFET DEVICES;

EID: 0033185086     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00141-0     Document Type: Article

References (24)

1. McWhorter A.L. Semiconductor surface physics. 1957;207-228 University of Philadelphia Press, Philadelphia.
2. Chistensson S., Lundström I., Svensson C. Solid-State Electron. 11:1968;813.
3. Surya C., Hsiang T.Y. Phys Rev B. 35:1987;6343.
4. Jayaraman R., Sodini C.G. IEEE Trans Electron Devices. 36:1989;1773.
5. Ghbaudo G., Roux-dit-Buisson O., Brini J. Phys Stat Sol (a). 132:1992;501.
6. Hung K.K., Ko P.K., Hu C., Cheng Y.C. IEEE Trans Electron Devices. 37:1990;654.
7. Hung K.K., Ko P.K., Hu C., Cheng Y.C. IEEE Trans Electron Devices. 37:1990;1323.
8. Klaassen F.M. IEEE Trans Electron Devices. 18:1971;887.
9. Surya C., Hsiang T.Y. Phys Rev B. 33:1986;4898.
10. Surya C., Hsiang T.Y. Solid-State Electron. 31:1988;959.
11. Çelik-Butler Z., Hsiang T.Y. Solid-State Electron. 30:1987;419.
12. Çelik Z., Hsiang T.Y. IEEE Trans Electron Devices. 32:1985;2797.
13. Fleetwood D.M., Meisenheimer T.L., Scofield J.H. IEEE Trans Electron Devices. 41:1994;1953.
14. Vandamme L.K.J., Li X., Rigaud D. IEEE Trans Electron Devices. 41:1994;1936.
15. Tsai C.Y.H., Gong J. IEEE Trans Electron Devices. 35:1994;2373.
16. Li X., Vandamme L.K.J. Solid-State Electron. 36:1993;1515.
17. Li X., Barros C., Vandamme E.P., Vandamme L.K.J. Solid-State Electron. 37:1994;1853.
18. Tsai M.-H., Ma T.P. IEEE Trans Electron Devices. 41:1994;2061.
19. Jang S.-L., Chen H.-K., Hu M.-C. Solid-State Electron. 42:1998;891.
20. Cheng C.-H., Surya C. Solid-State Electron. 36:1993;475.
21. Kirton M.J., Uren M.J. Adv Phys. 38:1989;367.
22. Vandamme E.P., Vandamme L.K.J., Claeys C., Simoen E., Scheutelkamp R.J. Solid-State Electron. 38:1995;1893.
23. Schroder D.K. Semiconductor material and device characterization. 1990;John Wiley and Sons, New York.
24. Meta-Software . HSPICE user's manual. 1991;Campbell, CA.