Impact of carrier injection in 2.2 nm-thick SiO2 oxides after first and substrate enhanced electron injection

Journal of Non-Crystalline Solids

Volumn 322, Issue 1-3, 2003, Pages 199-205

  Trapes, Céline ^a   Goguenheim, Didier ^a   Bravaix, Alain ^a  

^a Maison des Technologies   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUNNELING; FIELD EFFECT TRANSISTORS; IONIZATION; LEAKAGE CURRENTS; MOS DEVICES;

CARRIER INJECTION;

SILICA;

EID: 0038786838     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(03)00202-3     Document Type: Conference Paper

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