Studies on interface states at ultrathin SiO2/Si(100) interfaces by means of x-ray photoelectron spectroscopy under biases and their passivation by cyanide treatment

Journal of Applied Physics

Volumn 83, Issue 4, 1998, Pages 2098-2103

  Kobayashi, Hikaru ^a   Asano, Akira ^a   Asada, Shinya ^a   Kubota, Tomohiro ^a   Yamashita, Yoshiyuki ^a   Yoneda, Kenji ^b   Todokoro, Yoshihiro ^b  

^a OSAKA UNIVERSITY   (Japan)

^b PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CYANIDES; INTERFACES (MATERIALS); IONS; MOS DEVICES; PASSIVATION; SEMICONDUCTING SILICON; SILICA; ULTRATHIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

CYANIDE TREATMENT; ENERGY DISTRIBUTION;

ELECTRON ENERGY LEVELS;

EID: 0032003448     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366943     Document Type: Article

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