Experimental and theoretical studies of Si-CN bonds to eliminate interface states at Si/SiO2 interface

Surface Science

Volumn 542, Issue 3, 2003, Pages 244-252

  Maida, Osamu ^a   Asano, Akira ^a   Takahashi, Masao ^a   Iwasa, Hitoo ^a   Kobayashi, Hikaru ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Crystalline amorphous interfaces; Density functional calculations; Interface states; Semiconductor insulator interfaces; Silicon; Silicon oxides; X ray photoelectron spectroscopy

Indexed keywords

CHEMICAL BONDS; IRRADIATION; NEGATIVE IONS; PROBABILITY DENSITY FUNCTION; X RAY PHOTOELECTRON SPECTROSCOPY;

INTERFACE STATES;

INTERFACES (MATERIALS);

EID: 0043193873     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(03)00985-3     Document Type: Article

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