SCOPUS 정보 검색 플랫폼

Semiconductor Science and Technology

Volumn 13, Issue 7, 1998, Pages 792-795

Characterization of flicker noise in N2O and NH3 nitrided MOSFETs due to low-energy Ar+ backsurface gettering

(3) Surya, Charles a Wang, W a Lai, P T b

a HONG KONG POLYTECHNIC UNIVERSITY (Hong Kong)

b UNIVERSITY OF HONG KONG (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; DIELECTRIC MATERIALS; ELECTRON TRAPS; GETTERS; INTERFACES (MATERIALS); NITRIDING; RAPID THERMAL ANNEALING; SILICON WAFERS; SPURIOUS SIGNAL NOISE; STRESS RELAXATION;

BACKSURFACE GETTERING; FLICKER NOISE; THERMAL ACTIVATION;

MOSFET DEVICES;

EID: 0032116392 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/13/7/023 Document Type: Article

Times cited : (3)

References (17)

1
- 0020909751
- Lai S K, Lee J and Dham V K 1983 IEDM Tech. Dig. 190
- (1983) IEDM Tech. Dig. , pp. 190
- Lai, S.K.¹ Lee, J.² Dham, V.K.³

2
- 0026626370
- Liu Z H, Nee P, Ko P K, Hu C, Sodini C G, Gross B J, Ma T P and Cheng Y C 1992 IEEE Electron Device Lett. ED-13 41
- (1992) IEEE Electron Device Lett. , vol.ED-13 , pp. 41
- Liu, Z.H.¹ Nee, P.² Ko, P.K.³ Hu, C.⁴ Sodini, C.G.⁵ Gross, B.J.⁶ Ma, T.P.⁷ Cheng, Y.C.⁸

3
- 77957874169
- Yasuda M, Fukuda H and Iwabuchi T 1991 Japan. J. Appl. Phys. 30 3597
- (1991) Japan. J. Appl. Phys. , vol.30 , pp. 3597
- Yasuda, M.¹ Fukuda, H.² Iwabuchi, T.³

4
- 0000526980
- Chu T Y, Ting W, Ahn J H, Lin S and Kwong D L 1991 Appl. Phys. Lett. 59 1412
- (1991) Appl. Phys. Lett. , vol.59 , pp. 1412
- Chu, T.Y.¹ Ting, W.² Ahn, J.H.³ Lin, S.⁴ Kwong, D.L.⁵

5
- 0029359122
- Lai P T, Xu Z, Li G Q and Ng W T 1995 IEEE Electron Device Lett. EDL-16 354
- (1995) IEEE Electron Device Lett. , vol.EDL-16 , pp. 354
- Lai, P.T.¹ Xu, Z.² Li, G.Q.³ Ng, W.T.⁴

6
- 5844264630
- Kato I, Ito T, Inoue S, Nakamura T and Ishiwaka H 1982 Japan. J. Appl. Phys. 21 153
- (1982) Japan. J. Appl. Phys. , vol.21 , pp. 153
- Kato, I.¹ Ito, T.² Inoue, S.³ Nakamura, T.⁴ Ishiwaka, H.⁵

7
- 0024610593
- Hori T, Iwasaki H, Naito Y and Esaki H 1989 IEEE Trans. Electron Devices ED-36 340
- (1989) IEEE Trans. Electron Devices , vol.ED-36 , pp. 340
- Hori, T.¹ Iwasaki, H.² Naito, Y.³ Esaki, H.⁴

8
- 0017493207
- Jeppson K O and Svenson C M 1977 J. Appl. Phys. 48 2004
- (1977) J. Appl. Phys. , vol.48 , pp. 2004
- Jeppson, K.O.¹ Svenson, C.M.²

9
- 0026852475
- Joshi A B, Lo G O, Shih D K and Kwong D L 1992 IEEE Trans. Electron. Devices 39 883
- (1992) IEEE Trans. Electron. Devices , vol.39 , pp. 883
- Joshi, A.B.¹ Lo, G.O.² Shih, D.K.³ Kwong, D.L.⁴

10
- 0020203471
- Beyer K D and Yeh T H 1982 J. Electrochem. Soc. 129 2527
- (1982) J. Electrochem. Soc. , vol.129 , pp. 2527
- Beyer, K.D.¹ Yeh, T.H.²

11
- 0000423916
- Poponiak M R, Nagasaki T and Yeh T H 1977 J. Electrochem. Soc. 124 1802
- (1977) J. Electrochem. Soc. , vol.124 , pp. 1802
- Poponiak, M.R.¹ Nagasaki, T.² Yeh, T.H.³

12
- 0008649375
- Dutta P and Horn P M 1981 Rev. Mod. Phys. 53 497
- (1981) Rev. Mod. Phys. , vol.53 , pp. 497
- Dutta, P.¹ Horn, P.M.²

13
- 4243352485
- Surya C and Hsiang T Y 1987 Phys. Rev. B 35 6343
- (1987) Phys. Rev. B , vol.35 , pp. 6343
- Surya, C.¹ Hsiang, T.Y.²

14
- 0024015184
- Surya C and Hsiang T Y 1988 Solid-State Electron. 31 959
- (1988) Solid-State Electron. , vol.31 , pp. 959
- Surya, C.¹ Hsiang, T.Y.²

15
- 0028547551
- Ma Z J, Liu Z H, Cheng Y C, Ko P K and Hu C 1994 IEEE Trans. Electron Devices ED-41 2205
- (1994) IEEE Trans. Electron Devices , vol.ED-41 , pp. 2205
- Ma, Z.J.¹ Liu, Z.H.² Cheng, Y.C.³ Ko, P.K.⁴ Hu, C.⁵

16
- 0028549242
- Surya C, Ng S H, Brown E R and Maki P A 1994 IEEE Trans. Electron Devices ED-41 2016
- (1994) IEEE Trans. Electron Devices , vol.ED-41 , pp. 2016
- Surya, C.¹ Ng, S.H.² Brown, E.R.³ Maki, P.A.⁴

17
- 0026926732
- Ng S H and Surya C 1992 Solid-State Electron. 35 1213
- (1992) Solid-State Electron. , vol.35 , pp. 1213
- Ng, S.H.¹ Surya, C.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.