Elimination of interface states in the GaAs band-gap by cyanide treatment: XPS measurements under bias

Surface Science

Volumn 529, Issue 3, 2003, Pages 329-337

  Kubota, Tomohiro ^a,d   Ivančo, Ján ^a,e   Takahashi, Masao ^a,c   Yoneda, Kenji ^b   Todokoro, Yoshihiro ^b   Kobayashi, Hikaru ^a,c  

^a OSAKA UNIVERSITY   (Japan)

^b PANASONIC CORPORATION   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^d TOHOKU UNIVERSITY   (Japan)

^e INSTITUTE OF CHEMISTRY   (Slovakia)

Author keywords

Crystalline amorphous interfaces; Gallium arsenide; Interface states; Metal oxide semiconductor (MOS) structures; Semiconductor insulator interfaces; Silicon oxides; X ray photoelectron spectroscopy

Indexed keywords

CYANIDES; DEPOSITION; FERMI LEVEL; INTERFACES (MATERIALS); MOS DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

INTERFACE STATES;

SURFACE TREATMENT;

EID: 0037430904     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(03)00263-2     Document Type: Article

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