Chemical phase transitions of the HfO2SiON/Si nanolaminate by high-temperature thermal treatments in NO and O2 ambient

Applied Physics Letters

Volumn 86, Issue 26, 2005, Pages 1-3

  Oh, J H ^a   Park, Y ^a   An, K S ^b   Kim, Y ^b   Ahn, J R ^c   Baik, J Y ^d   Park, C Y ^d  

^a Korea Research Institute of Standards and Science   (South Korea)

^b Korea Research Institute of Chemical Technology   (South Korea)

^c Yonsei University   (South Korea)

^d Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIELECTRIC FILMS; DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; HEAT TREATMENT; LAMINATES; LEAKAGE CURRENTS; NANOSTRUCTURED MATERIALS; PERMITTIVITY; PHASE TRANSITIONS; SILICON COMPOUNDS; SPECTROSCOPIC ANALYSIS; THERMODYNAMIC STABILITY;

AMBIENT GASES; CHEMICAL PHASE TRANSITION; GATE DIELECTRIC FILMS; HIGH-RESOLUTION PHOTOEMISSION SPECTROSCOPY;

HAFNIUM COMPOUNDS;

EID: 22144468062     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1957110     Document Type: Article

References (15)

1. K. A. Ellis and R. A. Buhman, IBM J. Res. Dev. 43, 287 (1999).
2. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001).
3. P. D. Kirsch, C. S. Kang, J. Lozano, J. C. Lee, and J. G. Ekerdt, J. Appl. Phys. 91, 4353 (2002).
4. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 87, 484 (1999).
5. M. Kundu, N. Miyata, and M. Ichikawa, J. Appl. Phys. 92, 1914 (2002).
6. S. J. Wang, P. C. Lim, A. C. H. Huan, C. L. Liu, W. Chai, S. Y. Chow, J. S. Pan, Q. Li, and K. Ong, Appl. Phys. Lett. 82, 2047 (2003).
7. T. S. Jeon, J. M. White, and D. L. Kwong, Appl. Phys. Lett. 78, 368 (2000).
8. M. J. Cho, J. H. Park, H. B. Park, C. S. Hwang, J. H. Jeong, K. S. Hyun, Y. W. Kim, C. B. Oh, and H. S. Kang, Appl. Phys. Lett. 81, 3630 (2002).
9. S. J. Lee, T. S. Jeon, D. L. Kwong, and R. Clark, J. Appl. Phys. 92, 2807 (2002).
10. Y.-S. Lin, R. Puthenkovilakam, and J. P. Chang, Appl. Phys. Lett. 81, 2041 (2002).
11. Y. B. Kim, M. S. Kang, T. H. Lee, J. A. Ahn, and D. K. Choi, J. Vac. Sci. Technol. B 21, 2029 (2003).
12. M.-H. Cho, Y. S. Roh, C. N. Whang, K. Jeong, S. W. Nahm, D.-H. Ko, J. H. Lee, N. I. Lee, and K. Fujihara, Appl. Phys. Lett. 81, 472 (2002).
13. J. H. Oh, H. W. Yeom, Y. Hagimoto, K. Ono, M. Oshima, N. Hirashita, M. Nywa, A. Toriumi, and A. Kakizaki, Phys. Rev. B 63, 205310 (2001).
14. Y. D. Chung, J. W. Kim, C. N. Whang, and H. W. Yeom, Phys. Rev. B 65, 155310 (2002).
15. H. S. Chang, H. S. Hwang, M. H. Cho, D. W. Moon, S. J. Doh, J. H. Lee, and N. I. Lee, Appl. Phys. Lett. 84, 28 (2004).