Planarization processes and applications I. Undoped GeO2-SiO2 glasses

Journal of the Electrochemical Society

Volumn 146, Issue 10, 1999, Pages 3860-3871

  Simpson, Darrell L ^a,b   Croswell, Robert T ^a   Reisman, Arnold ^a   Temple, Dorota ^a   Kenneth Williams, C ^a  

^a North Carolina State University   (United States)

^b MCNC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; ENERGY DISPERSIVE SPECTROSCOPY; HIGH TEMPERATURE EFFECTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING GLASS; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SYNTHESIS (CHEMICAL);

GERMANOSILICATE GLASSES;

SEMICONDUCTING FILMS;

EID: 0033353335     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1392565     Document Type: Article

References (21)

1. A.C. Adams and C. D. Capio, J. Eleclrochem. Soc., 128, 423 (1981).
2. K. Sugai, S. Chikaki, T. Nakaima, and T. Kikkawa, Tecli. dig. Int. Electron Devices Meet., 781 (1997).
3. M. Matsuura, I. Tottori, K. Goto, K. Mackawa, and M. Hirayama, Tech. Dig. Int. Electron Devices Heel., 785 (1997).
4. W. Armstrong and D. Tolliver, J. Elecirochem. Soc., 121, 307 (1974).
5. R.A. Levy and K. Nassau, in Reduced Temperature Processing for VLSI, R. Reif and G. R. Srinivavan, Editors, PV 86-5, p. 132, The Electrochemical Society Proceeding Series, Pcnnington, NJ (1986).
6. B. Davari, C. Koburger, R. Schultz, J. Wamock, T. Furukawa, M. Jost, Y. Taur, W. Schwittek, J. DeBrosse, M. Kerbaugh, and J. Mauer, Tech. Dig. Int. Electron Devices Meet., 61 (1989).
7. B.E. Stine, D. Boning, J. Chung, D. Ciplickas, and J. Kibarian, IEEE Trans. Semicond. Manuf., 11. 552 (1998).
8. G. Baret, R. Madar, and C. Bernard, J. Elecirochem. Soc., 138, 2830 (1991).
9. G. Baret, R. Madar, and C. Bernard, J. Elecirochem. Soc., 138, 2836 (1991).
10. S.M. Fisher, H. Chino, K. Maeda, and Y. Nishimoto, Solid Stale Technol., 36, 55 (1993).
11. S. Rastani and A. Reisman, J. Elecirochem. Soc., 137, 1288 (1990).
12. D.L. Simpson, R. T. Croswell, A. Reisman, C. K. Williams, and D. Temple, J. Eleclrochein. Soc., 146, Submitted (1999).
13. S. Wolf, Silicon Processing for the VLSI Era. Vol. 2; Process Integration. Lattice Press, Sunset Beach, CA (1990).
14. CRC Handbook of Chemistry and Physiscs 76th ed., D. R. Lide, Editor, CRC Press, Inc., Boca Raton, FL (1995).
15. W. Kern and G. L. Schnäble, RCA Rev., 43, 423 (1982).
16. W. Kern and R. K. Smeltzer, Solid State Technol, 28, 171 (1985).
17. T. Ogino and Y. Amemiya, Jpn. J. Appl. Phys., 25, 1115 (1986).
18. J. Goldstein, P. Echün, E. Lifshin, D. Joy, D. Newbury, C. Fiori, A. Romig, and C. Lyman, Scanning Electron Microscopy andX-Ray Microanalysis, Plenum Press, New York (l992).
19. J.A. Peters, The Pennsylvania State University Technical Report, No. TR88-008 (1988).
20. G. Eriksson, Ada Chem. Scand., 25, 2651 ( 1971 ).
21. G. Eriksson. Chem. Scr., 8, 100 (1975).