Selective bond-breaking and bond-making in oxynitride of Si and Ge: A case of chemical bond manipulation

Surface Science

Volumn 387, Issue 1-3, 1997, Pages

  Prabhakaran, K ^a   Ogino, T ^a  

^a Bio Medical Informatics Research Center   (Japan)

Author keywords

Chemisorption; Germanium; Oxidation; Silicon; Silicon nitride; Silicon oxides; Silicon germanium; X ray photoelectron spectroscopy

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; CHEMISORPTION; DEPOSITION; DISSOCIATION; OXIDATION; SEMICONDUCTING FILMS; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; ULTRAVIOLET SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY (UPS);

CHEMICAL BONDS;

EID: 0031560002     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00477-9     Document Type: Article

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