Deep sub-micron strained Si0.85Ge0.15 channel p-channel Metal-Oxide-Semiconductor Field-Effect Transistors (pMOSFETs) with ultra-thin N2O-annealed SiN gate dielectric

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 8-11, 2005, Pages

  Chen, Ching Wei ^a   Chien, Chao Hsin ^b   Chen, Yi Cheng ^a   Hsu, Shih Lu ^b   Chang, Chun Yen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

Dislocation; N2O annealed; SiGe channel; SiN gate dielectric

Indexed keywords

ANNEALING; DIELECTRIC MATERIALS; GATES (TRANSISTOR); INTERFACES (MATERIALS); NITROGEN OXIDES; SILICON NITRIDE; THERMOOXIDATION;

BACK-END-OF-LINE (BEOL) CONTACTS; CHANNEL DEVICE; CHANNEL THICKNESS; GATE DIELECTRICS;

MOSFET DEVICES;

EID: 19944379863     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.L278     Document Type: Article

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