Characteristics of dielectric layers grown on Ge by low temperature vacuum ultraviolet-assisted oxidation

Applied Physics Letters

Volumn 75, Issue 9, 1999, Pages 1261-1263

  Craciun, Valentin ^a,b   Boyd, Ian W ^a   Hutton, Bernie ^a   Williams, David ^a  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

^b NATIONAL INSTITUTE FOR LASER   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; CURRENT VOLTAGE CHARACTERISTICS; DISCHARGE LAMPS; FILM GROWTH; OXIDATION; SEMICONDUCTING GERMANIUM; STOICHIOMETRY; ULTRAVIOLET RADIATION; VACUUM; X RAY PHOTOELECTRON SPECTROSCOPY;

VACUUM ULTRAVIOLET-ASSISTED OXIDATION;

DIELECTRIC FILMS;

EID: 0032614860     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124661     Document Type: Article

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