Effects of growth temperature on GaN nucleation layers

Applied Physics Letters

Volumn 75, Issue 15, 1999, Pages 2187-2189

  Yi, M S ^a   Lee, H H ^a   Kim, D J ^a   Park, S J ^a   Noh, D Y ^a   Kim, C C ^b   Je, J H ^b  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001408312     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124959     Document Type: Article

References (12)

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